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During the period of the project we have grown layers of GaN, (InGa)N and (AlGa)N by a modified MBE method, using an RF plasma sources to nitrogen activation on a variety of substrates including (001), (111)A and (111)B oriented GaAs and GaP, SiC-6H(0001), HVPE grown GaN(0001), sapphire and bulk GaN. As a result of this work, we have grown by MBE GaN films with high luminescence efficiency, established methods for successful n- and p-type doping of GaN, grown (InGa)N/GaN and (AlGa)N/GaN quantum wells and recently made LEDs which emit in the UV (380 nm) (the first in Europe) and solar-blind UV photodetectors (the first in Europe). We have studied the resulting films using a variety of techniques including XRD, PL, PLE, FIR, AES, SIMS, EPMA, SEM, ER, CV, RAMAN, TEM, HRTEM, CBED, RS, MRS and AFM.
Results of this work have been published in 29 papers (10 during the third year of the project) and presented in 29 conference papers (10 during the third year), the total amount so far with the support of INTAS is 58 (20 during the third year). We have currently submitted (11) and are preparing several (2) additional papers as a result of this work. Details can be found on WWW address http://www.ccc.nottingham.ac.uk/~ppzcheng/nitride.html
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