Cel
Quaternary dilute nitrides GaInPN and GaPAsN III-V alloys will be grown and characterized in view of elaborating tandem solar cells in which, the quaternary alloy will be lattice matched on a silicon substrate. With such alloys, by varying their composition, it is possible to decrease simultaneously the bandgap and the lattice constant, which is not possible with nitrogen free III-V alloys. The dilute nitrides will be grown by Metal Organic Vapour Phase Epitaxy and their aimed composition will be such that they will have both a bandgap around 1.7 eV and the silicon lattice constant. The materials elaborated will be characterized by X-ray diffraction, transmission electron microscopy, electrical and optical techniques. Their characteristics will be optimized for having electrical characteristics suitable for elaborating high efficiency tandem solar cells. A great attention will be paid on defects and impurity that could affect the electrical properties of the layers. In particular, carbon and hydrogen, issued from the precursors, that could be present in rather high concentration and that are suspected to play a negative role for the efficiency of the cells will be investigated. Tandem solar cells will be designed and elaborated and their characteristics will be optimized. Attention will be paid to anti reflection coatings compatible with the dilute nitrides.
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PARIS
Francja