Cel This project addresses the technology for Non Volatile Memories, both embedded and stand-alone, for the 0.15µm generations and beyond. One of the main limitations is presently given by the difficulty in reducing the thickness of tunnel and interpoly dielectric, due to reliability problems, connected to the stress induced leakage, which in turn impacts the scalability of the memory cell and the programming speed. The target of the project is to achieve a reduction of 20-25% in the tunnel oxide thickness and in the interpoly dielectric equivalent thickness, while keeping the same reliability, achieved with present gate oxide thickness. The result will be achieved by an in depth investigation of the physical mechanisms causing the leakage currents, and its dependence on process parameters and programming conditions, and it will be demonstrated at the end of the project on large cell arrays by the industrial partners. Dziedzina nauki natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity Program(-y) FP5-IST - Programme for research, technological development and demonstration on a "User-friendly information society, 1998-2002" Temat(-y) 1.1.2.-4.8.3 - Processes, equipment and materials Zaproszenie do składania wniosków Data not available System finansowania CSC - Cost-sharing contracts Koordynator STMICROELECTRONICS S.R.L. Wkład UE Brak danych Adres VIA OLIVETTI 2 20041 AGRATE BRIANZA Włochy Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (4) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko COMMISSARIAT A L'ENERGIE ATOMIQUE Francja Wkład UE Brak danych Adres 31-33 RUE DE LA FEDERATION 75752 PARIS CEDEX 15 Zobacz na mapie Koszt całkowity Brak danych INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW Belgia Wkład UE Brak danych Adres KAPELDREEF 75 3001 LEUVEN Zobacz na mapie Koszt całkowity Brak danych PHILIPS INNOVATIVE TECHNOLOGY SOLUTIONS NV Belgia Wkład UE Brak danych Adres INTERLEUVENLAAN 80 3001 HEVERLEE Zobacz na mapie Koszt całkowity Brak danych POLITECNICO DI MILANO Włochy Wkład UE Brak danych Adres PIAZZA LEONARDO DA VINCI 32 20133 MILANO Zobacz na mapie Koszt całkowity Brak danych