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Rezultaty
Within the frame of the SODAMOS project, the design, optimisation and fabrication of Accumulated Low Schottky Barrier (ALSB) MOSFETs on SOI has been proposed in order to solve critical problems associated to the source/drain architecture of end-of-roadmap MOS technologies. A complete validation of the ALSB SOI technology has been demonstrated through an organisation of the SODAMOS project into three main work packages focused on material engineering, modelling/simulation and device integration.
Low Schottky barrier materials such as PtSi, IrSi, ErSi(2) have been extensively studied using X-ray photoemission spectroscopy, transmission electron microscopy and advanced electrical characterization/modelling in order to optimise silicides with best current drive capabilities. Device simulation has been conducted to determine the best architecture parameters that optimise the current/transconductance performance and minimize access resistance and short channel effects. Of particular interest is the observation that maximum performance is obtained when the gate do not overlap the source/drain extensions which provide to Schottky-Barrier (SB) MOSFETs a clear advantage over conventional ones for high frequency operation.
The specificity of the ALSB-SOI MOSFET process lies in the use of very thin semiconductor or dielectric films ranging from 2nm for the gate oxide to 40nm for the thickness of the tungsten gate. Device integration of p-type MOSFETs with a metallic midgap gate has been demonstrated for the first time. An excellent current drive of 425 µA/µm coupled to an off-state current of 368nA is obtained for a gate length of 40 nm. The measured transconductance is 362mS/mm. This performance is the best ever recorded for a p-type Schottky MOSFET.
A comparison to best published Ion/Ioff performance of Schottky MOSFETs indicates that SODAMOS is ranking first with Spinnaker Semiconductor. Another comparison with conventional MOS technologies developed in major industrial labs shows that SB-MOSFETs steadily progress in terms of current drive capabilities and offer the promise of very high frequency operation. Remarkably, this level of performance is obtained through a drastically simplified and cost-effective manufacturing process.
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