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Publications

Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Author(s): A. Erdmann, P. Evanschitzky, H. Mezilhy, V. Philipsen, E. Hendrickx, M. Bauer
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS, Issue 18/01, 2019, Page(s) 1, ISSN 1932-5150
DOI: 10.1117/1.jmm.18.1.011005

Advanced EUV mask and imaging modeling

Author(s): Peter Evanschitzky, Andreas Erdmann
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS, Issue 16/04, 2017, Page(s) 1, ISSN 1932-5150
DOI: 10.1117/1.jmm.16.4.041005

Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

Author(s): Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Vicky Philipsen, Vu Luong, Eric Hendrickx
Published in: Advanced Optical Technologies, Issue 6/3-4, 2017, ISSN 2192-8584
DOI: 10.1515/aot-2017-0019

Correlated diffuse x-ray scattering from periodically nanostructured surfaces

Author(s): V. Soltwisch, A. Haase, J. Wernecke, J. Probst, M. Schoengen, S. Burger, M. Krumrey, F. Scholze
Published in: Physical Review B, Issue 94/3, 2016, ISSN 2469-9950
DOI: 10.1103/PhysRevB.94.035419

High Mobility Materials on Insulator for Advanced Technology Nodes

Author(s): W. Schwarzenbach, C. Figuet, D. Delprat, C. Veytizou, I. Huyet, C. Tempesta, L. Ecarnot, J. Widiez, V. Loup, J.-M. Hartmann, P. Besson, C. Deguet, F. Mazen, B.-Y. Nguyen, C. Maleville
Published in: ECS Transactions, Issue 66/4, 2015, Page(s) 31-37, ISSN 1938-5862
DOI: 10.1149/06604.0031ecst

Characterizing electron beam induced damage in metrology and inspection of advance devices

Author(s): Violeta Navarro, Hamed Sadeghian, Abbas Mohtashami, Ilan Englard, Dror Shemesh, Nitin Singh Malik
Published in: 33rd European Mask and Lithography Conference, 2017, Page(s) 17
DOI: 10.1117/12.2279707

Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

Author(s): Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last
Published in: Extreme Ultraviolet (EUV) Lithography VIII, 2017, Page(s) 101430D
DOI: 10.1117/12.2258025

Diffuser concepts for in-situ wavefront measurements of EUV projection optics

Author(s): Mark A. van de Kerkhof, Uwe Zeitner, Torsten Feigl, Stefan Bäumer, Robbert Jan Voogd, Ad Schasfoort, Evert Westerhuis, Wouter Engelen, Manfred Dikkers, Yassin Chowdhury, Michael D. Kriese
Published in: Extreme Ultraviolet (EUV) Lithography IX, 2018, Page(s) 24
DOI: 10.1117/12.2297433

EUV lithography industrialization progress

Author(s): Roderik van Es, Mark van de Kerkhof, Leon Levasier, Rudy Peeters, Hans Jasper
Published in: International Conference on Extreme Ultraviolet Lithography 2017, 2017, Page(s) 2
DOI: 10.1117/12.2281184

EUV for HVM: towards and industrialized scanner for HVM NXE3400B performance update

Author(s): Mark A. van de Kerkhof, Arthur W. E. Minnaert, Marco Pieters, Hans Meiling, Joost Smits, Rudy Peeters, Roderik van Es, Geert Fisser, Jos W. de Klerk, Roel Moors, Eric Verhoeven, Leon Levasier
Published in: Extreme Ultraviolet (EUV) Lithography IX, 2018, Page(s) 13
DOI: 10.1117/12.2299503

EUV lithography performance for manufacturing: status and outlook

Author(s): Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Martijn van Noordenburg, Roderik van Es, Eric Verhoeven, Henk Meijer, Arthur Minnaert, Jan-Willem van der Horst, Hans Meiling, Joerg Mallmann, Christian Wagner, Judon Stoeldraijer, Geert Fisser, Jo Finders, Carmen Zoldesi, Uwe Stamm, Herman Boom, David Brandt, Daniel Brown, Igor Fomenkov, Michael Purvis
Published in: Extreme Ultraviolet (EUV) Lithography VII, 2016, Page(s) 97760A
DOI: 10.1117/12.2220423

NXE pellicle: offering a EUV pellicle solution to the industry

Author(s): Derk Brouns, Aage Bendiksen, Par Broman, Eric Casimiri, Paul Colsters, Peter Delmastro, Dennis de Graaf, Paul Janssen, Mark van de Kerkhof, Ronald Kramer, Matthias Kruizinga, Henk Kuntzel, Frits van der Meulen, David Ockwell, Maria Peter, Daniel Smith, Beatrijs Verbrugge, David van de Weg, Jim Wiley, Noelie Wojewoda, Carmen Zoldesi, Pieter van Zwol
Published in: Extreme Ultraviolet (EUV) Lithography VII, 2016, Page(s) 97761Y
DOI: 10.1117/12.2221909

The future of EUV lithography: enabling Moore's Law in the next decade

Author(s): Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura
Published in: Extreme Ultraviolet (EUV) Lithography VIII, 2017, Page(s) 101430G
DOI: 10.1117/12.2261079

The future of EUV lithography: continuing Moore's Law into the next decade

Author(s): Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura
Published in: Extreme Ultraviolet (EUV) Lithography IX, 2018, Page(s) 23
DOI: 10.1117/12.2295800

Contrast optimization for 0.33NA EUV lithography

Author(s): Jo Finders, Sander Wuister, Thorsten Last, Gijsbert Rispens, Eleni Psari, Jan Lubkoll, Eelco van Setten, Friso Wittebrood
Published in: Extreme Ultraviolet (EUV) Lithography VII, 2016, Page(s) 97761P
DOI: 10.1117/12.2220036

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Author(s): Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser
Published in: Photomask Technology 2015, 2015, Page(s) 963503
DOI: 10.1117/12.2202258

First light at EBL2

Author(s): Norbert Koster, Edwin te Sligte, Freek Molkenboer, Alex Deutz, Peter van der Walle, Pim Muilwijk, Wouter Mulckhuyse, Bastiaan Oostdijck, Christiaan Hollemans, Björn Nijland, Peter Kerkhof, Michel van Putten, Jeroen Westerhout
Published in: Extreme Ultraviolet (EUV) Lithography VIII, 2017, Page(s) 101431N
DOI: 10.1117/12.2257997

EUV mask lifetime testing using EBL2

Author(s): Chien-Ching Wu, Maurice P.M. A. Limpens, Jacqueline van Veldhoven, Herman Bekman, Alex Deutz, Edwin te Sligte, Arnold J. Storm, Michel van Putten
Published in: Extreme Ultraviolet (EUV) Lithography IX, 2018, Page(s) 33
DOI: 10.1117/12.2297369

Ultra Clean sample transportation in an EUV exposure system

Author(s): F.T. Molkenboer, N.B. Koster, A.F. Deutz, B.A.H. Nijland, P.J. Kerkhof, P.M. Muilwijk, B.W. Oostdijck, J. Westerhout, C.L. Hollemans, W.F.W. Mulckhuyse, M. van Putten, P. van der Walle, A.M. Hoogstrate, J.R.H. Diesveld, A. Abutan
Published in: AVS Proceedings, Issue 64, 2017, Page(s) VT-WeM3

EBL2: realization and qualification of an EUV exposure system

Author(s): Michel van Putten, N.B. Koster, A.F. Deutz, B.A.H. Nijland, P.J. Kerkhof, P.M. Muilwijk, B.W. Oostdijck, J. Westerhout, C.L. Hollemans, E. te Sligte, W.F.W. Mulckhuyse, F.T. Molkenboer, A.M. Hoogstrate, P. van der Walle, J.R.H. Diesveld, A. Abutan
Published in: AVS Proceedings, Issue 64, 2017, Page(s) VT-TuM11

Characterization of EBL2 EUV exposure facility

Author(s): Edwin te Sligte, Michel van Putten, Freek T. Molkenboer, Peter van der Walle, Pim M. Muilwijk, Norbert B. Koster, Jeroen Westerhout, Peter J. Kerkhof, Bastiaan W. Oostdijck, Alex F. Deutz, Wouter Mulckhuyse
Published in: International Conference on Extreme Ultraviolet Lithography 2017, 2017, Page(s) 78
DOI: 10.1117/12.2280356

First light and results on EBL2

Author(s): Norbert Koster, Edwin te Sligte, Alex Deutz, Freek Molkenboer, Pim Muilwijk, Peter van der Walle, Wouter Mulckhuyse, Bjorn Nijland, Peter Kerkhof, Michel van Putten
Published in: Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 2017, Page(s) 104540O
DOI: 10.1117/12.2279025

Latest developments on EUV reticle and pellicle research and technology at TNO

Author(s): Rogier Verberk, Norbert Koster, Wilbert Staring, Edwin te Sligte
Published in: 33rd European Mask and Lithography Conference, 2017, Page(s) 10
DOI: 10.1117/12.2279672

Optimized phase-shifting masks for high-resolution resist patterning by interference lithography

Author(s): Sascha Brose, Serhiy Danylyuk, Lukas Bahrenberg, Peter Loosen, Larissa Juschkin, Rainer Lebert
Published in: International Conference on Extreme Ultraviolet Lithography 2017, 2017, Page(s) 81
DOI: 10.1117/12.2280582

Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope

Author(s): Lukas Bahrenberg, Stefan Herbert, Jenny Tempeler, Aleksey Maryasov, Oskar Hofmann, Serhiy Danylyuk, Rainer Lebert, Peter Loosen, Larissa Juschkin
Published in: Extreme Ultraviolet (EUV) Lithography VI, 2015, Page(s) 942229
DOI: 10.1117/12.2085929

Vertically stacked gate-all-around Si nanowire transistors: key process optimizations and ring oscillator demonstration

Author(s): Mertens, H.; Ritzenthaler, R.; Pena, V.; Santoro, G.; Kenis, K.; Schulze, A.; Dentoni Litta, E.; Chew, S.; Devriendt, K.; Chiarella, T.; Demuynck, S.; Yakimets, D.; Jang, D.; Spessot, A.; Eneman, G.; Dangol, A.; Lagrain, P.; Bender, H.; Sun, S.; Korolik, M.; Kioussis, D.; Kim, M.; Bu, K.; Chen, S.; Cogorno, M.; Devrajan, J.; Machillot, J.; Yoshida, N.; Kim, N.; Barla, K.; Mocuta, D. and Horiguchi,
Published in: 2017

Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Author(s): Andreas Erdmann, Peter Evanschitzky, Vicky Philipsen, Markus Bauer, Eric Hendrickx, Hazem Mesilhy
Published in: Extreme Ultraviolet (EUV) Lithography IX, 2018, Page(s) 35
DOI: 10.1117/12.2299648

Efficient simulation of EUV pellicles

Author(s): Peter Evanschitzky, A. Erdmann
Published in: International Conference on Extreme Ultraviolet Lithography 2017, 2017, Page(s) 11
DOI: 10.1117/12.2280535

Polarization resolved measurements with the new EUV ellipsometer of PTB

Author(s): Victor Soltwisch, Andreas Fischer, Christian Laubis, Christian Stadelhoff, Frank Scholze, Albrecht Ullrich
Published in: Extreme Ultraviolet (EUV) Lithography VI, 2015, Page(s) 942213
DOI: 10.1117/12.2085798

Characterization of optical material parameters for EUV Lithography applications at PTB

Author(s): Christian Laubis, Anton Haase, Victor Soltwisch, Frank Scholze
Published in: 31st European Mask and Lithography Conference, 2015, Page(s) 96610W
DOI: 10.1117/12.2195009

Innovative scatterometry approach for self-aligned quadruple patterning (SAQP) process control

Author(s): Anil Gunay Demirkol, Efrain Altamirano-Sánchez, IMEC (Belgium); Stephane Heraud, Nova Measuring Instruments GmbH (Germany); Stephane Godny, Anne-Laure Charley, Philippe Leray, IMEC (Belgium); Ronen Urenski, Oded Cohen, Igor Turovets, Shay Wolfling, Nova Measuring Instruments Ltd. (Israel)
Published in: SPIE Advanced Lithography 2016, Issue 2016, 2016, Page(s) 60,61

Realization of an in-situ Mueller-matrix imaging ellipsometer for the real time observation of surface properties in an ultra-high vacuum EUV facility

Author(s): P. Muilwijk
Published in: AVS Proceedings, Issue 63, 2016, Page(s) "Paper #4224"

EBL2, a flexible, controlled EUV exposure and surface analysis facility

Author(s): Edwin te Sligte, Norbert Koster, Freek Molkenboer, Alex Deutz
Published in: Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 2016, Page(s) 99840R
DOI: 10.1117/12.2240302

EBL2: high power EUV exposure facility

Author(s): Edwin te Sligte, Norbert Koster, Freek Molkenboer, Peter van der Walle, Pim Muilwijk, Wouter Mulckhuyse, Bastiaan Oostdijck, Christiaan Hollemans, Björn Nijland, Peter Kerkhof, Michel van Putten, André Hoogstrate, Alex Deutz
Published in: Photomask Technology 2016, 2016, Page(s) 998520
DOI: 10.1117/12.2240921

Realisation of a vacuum system of an EUV exposure system Presentation

Author(s): F. Molkenboer
Published in: AVS Proceedings, Issue 63, 2016, Page(s) "Paper #3725"

A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow

Author(s): W. F. Clark, A. Juncker, E. Paladugu, D. Fried, C. J. Wilson, G. Pourtois, M. Gallagher, A. De Jamblinne, D. Piumi, J. Boemmels, Z. S. Tokei, D. Mocuta
Published in: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Page(s) 43-46
DOI: 10.1109/SISPAD.2016.7605144

Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip

Author(s): S. Guissi, W. F. Clark, A. Junker, J. Ervin, K. Greiner, D. Fried, B. Briggs, K. Devriendt, F. Sebaai, A. Charley, C. J. Wilson, J. Boemmels, Z. Tőkei
Published in: INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, Issue 2017, 2017

Introducing the EUV CNT pellicle

Author(s): Jae Uk Lee, Johannes Vanpaemel, Ivan Pollentier, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Marina Timmermans, Michael De Volder, Emily Gallagher
Published in: Photomask Technology 2016, Issue 99850C (25 October 2016), 2016, Page(s) 99850C
DOI: 10.1117/12.2243019

Novel membrane solutions for the EUV pellicle: better or not?

Author(s): Ivan Pollentier, Jae Uk Lee, Marina Timmermans, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Emily E. Gallagher
Published in: Extreme Ultraviolet (EUV) Lithography VIII, Issue 01430L (24 March 2017), 2017, Page(s) 101430L
DOI: 10.1117/12.2257891

Reducing EUV mask 3D effects by alternative metal absorbers

Author(s): Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Eric Hendrickx, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. E. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter
Published in: Extreme Ultraviolet (EUV) Lithography VIII, 2017, Page(s) 1014310
DOI: 10.1117/12.2257929

Mitigating EUV mask 3D effects by alternative metal absorbers

Author(s): Philipsen, V.; Luong, V.; Hendrickx, E.; Erdmann, A.; Dongbo, X.; Evanschitzky, P.; van de Kruijs, R.; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M. and Naasz, S.
Published in: 2016

Optimized EUV mask absorber stack for improved imaging by reducing roughness and crystallinity of alternative absorber materials

Author(s): Luong, V.; Philipsen, V.; Hendrickx, E.; Scholze, F.; van de Kruijs, R.; Edrisi, A.; Wood, O. and Heyns, M.
Published in: 2016

RMG nMOS 1<sup>st</sup> process enabling 10x lower gate resistivity in N7 bulk FinFETs

Author(s): L.-A. Ragnarsson, H. Dekkers, T. Schram, S. A. Chew, B. Parvais, M. Dehan, K. Devriendt, Z. Tao, F. Sebaai, C. Baerts, S. Van Elshocht, N. Yoshida, A. Phatak, C. Lazik, A. Brand, W. Clark, D. Fried, D. Mocuta, K. Barla, N. Horiguchi, A. V.-Y. Thean
Published in: 2015 Symposium on VLSI Technology (VLSI Technology), 2015, Page(s) T148-T149
DOI: 10.1109/VLSIT.2015.7223656

Layout optimization and trade-off between 193i and EUV-based patterning for SRAM cells to improve performance and process variability at 7nm technology node

Author(s): Sushil Sakhare, Darko Trivkovic, Tom Mountsier, Min-Soo Kim, Dan Mocuta, Julien Ryckaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Mircea Dusa
Published in: Design-Process-Technology Co-optimization for Manufacturability IX, 2015, Page(s) 94270O
DOI: 10.1117/12.2086100

Self-aligned-quadruple-patterning for N7/N5 silicon fins

Author(s): Efrain Altamirano-Sánchez, Tao S. Zheng, Anil Gunay Demirkol, Gian F. Lorusso, Toby Hopf, Jean-Christophe Everat IMEC (Belgium), William Clark, Coventor (France); Daniel Sobieski, Fung-Suong Ou, Lam Research Corp. (United States); David Hellin, Lam Research (Belgium)
Published in: SPIE Advanced Lithigraphy 2016, 2016

Predicting LER and LWR in SAQP with 3D virtual fabrication

Author(s): Jiangjiang (Jimmy) Gu, Dalong Zhao, Vasanth Allampalli, Daniel Faken, Ken Greiner, David M. Fried
Published in: Advanced Etch Technology for Nanopatterning V, 2016, Page(s) 97820N
DOI: 10.1117/12.2218929

EBL2: EUV exposure and surface analysis system

Author(s): E. te Sligte
Published in: EUVL Symposium, Issue 2015, 2015

Sub 20nm particle inspection on EUV mask blanks

Author(s): P. Bussink
Published in: SPIE Advanced Lithography Proceedings, Issue 2016, 2016, Page(s) 9778-115

Parallel, high throughput atomic force metrology for EUV masks and wafers

Author(s): H. Sadeghian
Published in: SPIE Advanced Lithography Proceedings, Issue 2016, 2016

EBL2, a flexible and controlled EUV exposure and surface analysis system

Author(s): E. te Sligte
Published in: PTB Workshop, Issue 2015, 2015

Vacuum Architecture of an EUV exposure system

Author(s): F. Molkenboer
Published in: AVS Proceedings, Issue 62, 2015, Page(s) Paper VT-WeM11

EUV lithography imaging using novel pellicle membranes

Author(s): Ivan Pollentier, Johannes Vanpaemel, Jae Uk Lee, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Emily E. Gallagher
Published in: Extreme Ultraviolet (EUV) Lithography VII, 2016, Page(s) 977620
DOI: 10.1117/12.2220031

Properties and performance of EUVL pellicle membranes

Author(s): Emily E. Gallagher, Johannes Vanpaemel, Ivan Pollentier, Houman Zahedmanesh, Christoph Adelmann, Cedric Huyghebaert, Rik Jonckheere, Jae Uk Lee
Published in: Photomask Technology 2015, 2015, Page(s) 96350X
DOI: 10.1117/12.2199076

Update on EUV radiometry at PTB

Author(s): Christian Laubis, Annett Barboutis, Christian Buchholz, Andreas Fischer, Anton Haase, Florian Knorr, Heiko Mentzel, Jana Puls, Anja Schönstedt, Michael Sintschuk, Victor Soltwisch, Christian Stadelhoff, Frank Scholze
Published in: Extreme Ultraviolet (EUV) Lithography VII, 2016, Page(s) 977627
DOI: 10.1117/12.2218902

Characterization of Mo/Si mirror interface roughness for different Mo layer thickness using resonant diffuse EUV scattering

Author(s): Anton Haase, Victor Soltwisch, Frank Scholze, Stefan Braun
Published in: Optical Systems Design 2015: Optical Fabrication, Testing, and Metrology V, 2015, Page(s) 962804
DOI: 10.1117/12.2191265

Realisation of a vacuum system for EUV beam line EBL2

Author(s): Freek Molkenboer, Norbert Koster, Alfred Abutan, Alex Deutz, Hans Diesveld, Christiaan Hollemans, Andre Hoogstrate, Peter Kerkhof, Pim Muilwijk, Wouter Mulckhuyse, Bjorn Nijland, Bastiaan Oostdijck, Michel van Putten, Edwin te Sligte, Peter van der Walle, Jeroen Westerhout
Published in: NEVAC Blad, Issue 55 (3), 2017, Page(s) p 18-23, ISSN 0169-9431