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High Performance and High Yield Heterogeneous III-V/Si Photonic Integrated Circuits using a Thin and Uniform Bonding Layer



O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Author(s): Keshuang Li, Zizhuo Liu, Mingchu Tang, Mengya Liao, Dongyoung Kim, Huiwen Deng, Ana M. Sanchez, R. Beanland, Mickael Martin, Thierry Baron, Siming Chen, Jiang Wu, Alwyn Seeds, Huiyun Liu
Published in: Journal of Crystal Growth, Issue 511, 2019, Page(s) 56-60, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.01.016

High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Author(s): Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissiere, Cécilia Dupré, Viviane Muffato, Frank Fournel, Christophe Jany, Franck Bassani, Sylvain David and Thierry Baron
Published in: Proceedings of Compound Semiconductor Week 2019, Issue Yearly, 2019
Publisher: Proceedings of Compound Semiconductor Week 2019

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