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Mechanical Impact on Non-silicon Devices: Stress Effects on Technology

Project description

Solving the challenges of miniaturisation

As electronic devices shrink in size, the demand for efficient non-silicon-based Field-Effect Transistors (FETs) grows. However, these devices face challenges in maintaining performance under mechanical stress, in addition to the traditional thermal considerations. The inability to accurately predict the effects of such stress hampers the development of reliable models for non-silicon FETs. Supported by the Marie Skłodowska-Curie Actions (MSCA) programme, the MINDSET project pioneers the integration of mechanical stress up to GPa levels with electrical characterisation and on-chip heating. By delving into multitudinous electrical, physical, and reliability characteristics, MINDSET aims to create accurately calibrated models to predict Stress Effects on Technology (SET). Overall, the project offers a promising avenue to unravel the intricate dynamics shaping non-silicon FETs.

Objective

This project aims to imply the co-integrated externally applied Mechanical Stress (MS) up to GPa levels by nanoindentation with electrical characterization setup and on-chip heating capability to study the properties of Non-silicon Devices (ND), specifically two-dimensional Transition metal dichalcogenides (2D TMD) and indium gallium zinc oxide (IGZO) based devices to explore the multitudinous electrical, physical, and reliability characteristics and creating accurately-calibrated models to predict the Stress Effects on Technology (SET). The project encompasses three objectives, which are further subdivided into five work packages (WPs) for easy flow and achievement of the goal. The first objective is to Integrate non-silicon FETs with an on-chip heating to Co-integrated electro-mechanical setup. The first objective paves the way to lead us to our second objective, in which the Dual Assessment with Electro-mechanical and Reliability Characterization of 2D TMD and IGZO FETs with MS and heating is performed. Finally, to corroborate the understanding and the physics of devices, accurate modelling and simulation will be performed in the third objective using the finite element method (FEM) and technology computer-aided design (TCAD), which will be calibrated with experimental data as obtained in the second objective. This project will be valuable for gaining insights into the factors that influence the behaviour of non-silicon-based FETs, including an additional factor like mechanical stress in addition to heating.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

(opens in new window) HORIZON-MSCA-2023-PF-01

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Coordinator

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Net EU contribution
€ 175 920,00
Address
KAPELDREEF 75
3001 Leuven
Belgium
Region
Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven
Activity type
Research Organisations
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Total cost
No data