Obiettivo With the advent of nanometric devices, the relevance of leakage power has grown tremendously. All technology roadmaps, as well as the results from advanced semiconductor labs indicate leakage as the real showstopper for the future generations of nanoelectronic circuits if proper counter-measures will not be taken. To be successful, and thus leading to the capability of fabricating chips with sub-65nm technologies, such counter-measures must be rooted in the design domain, as process improvement will not be sufficient to cope with the increased leakage currents in MOSFETs. In other terms, time has come for considering leakage reduction also a design problem, and not only a technology problem.CLEAN will contribute in a decisive way to the solution of the problem of controlling leakage currents in CMOS designs below 65nm, which is of strategic importance in the ASIC and SoC design landscape. The RandD effort will crystallize around the development of new leakage models for nanometric technologies usable at different levels of abstraction, from device to behavioral, innovative circuit and architectural solutions for efficient leakage management, novel methods and prototype EDA tools for automatic leakage minimization. Such methods and tools will be integrated into commercial EDA frameworks, thus providing comprehensive solutions for power-driven design.The CLEAN Consortium features the right mix of competence (semiconductor vendors, EDA vendors, research institutes) and the appropriate mobilization of resources to guarantee the successful achievement of all the project objectives. Tight links to on-going European projects targeting advanced silicon technology development (e.g. the NanoCMOS IP and its possible successor, PullNano) will guarantee synergy and convergence of objectives, towards the establishment of design capabilities that will be key for consolidating and growing the European competitiveness in the nanoelectronics business of the future. Campo scientifico natural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloidsengineering and technologynanotechnologynanoelectronics Programma(i) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Argomento(i) IST-2004-2.4.1 - Nanoelectronics Invito a presentare proposte Data not available Meccanismo di finanziamento IP - Integrated Project Coordinatore STMICROELECTRONICS SRL Contributo UE Nessun dato Indirizzo VIA OLIVETTI 2 20041 AGRATE BRIANZA Italia Mostra sulla mappa Costo totale Nessun dato Partecipanti (13) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto BUDAPESTI MUSZAKI ES GAZDASAGTUDOMANYI EGYETEM Ungheria Contributo UE Nessun dato Indirizzo MUEGYETEM RAKPART 3 1111 BUDAPEST Mostra sulla mappa Costo totale Nessun dato BULLDAST S.R.L. Italia Contributo UE Nessun dato Indirizzo VIA SFORZESCA 3 10100 TORINO Mostra sulla mappa Costo totale Nessun dato CHIPVISION DESIGN SYSTEMS AG Germania Contributo UE Nessun dato Indirizzo FRITZ BOCK STRASSE 5 26121 OLDENBURG Mostra sulla mappa Costo totale Nessun dato COMMISSARIAT A L'ENERGIE ATOMIQUE Francia Contributo UE Nessun dato Indirizzo BATIMENT LE PONANT D, 25 RUE LEBLANC 75015 PARIS CEDEX 15 Mostra sulla mappa Costo totale Nessun dato CONSORZIO PER LA RICERCA E L'EDUCAZIONE PERMANENTE, TORINO Italia Contributo UE Nessun dato Indirizzo CORSO DUCA DEGLI ABRUZZI 24 10129 TORINO Mostra sulla mappa Costo totale Nessun dato DANMARKS TEKNISKE UNIVERSITET Danimarca Contributo UE Nessun dato Indirizzo ANKER ENGELUNDSVEJ 1, BYGNING 101A 2800 KGS. LYNGBY Mostra sulla mappa Costo totale Nessun dato EDACENTRUM GMBH Germania Contributo UE Nessun dato Indirizzo SCHNEIDERBERG 32 30167 HANNOVER Mostra sulla mappa Costo totale Nessun dato INFINEON TECHNOLOGIES AG Germania Contributo UE Nessun dato Indirizzo 81726 MUENCHEN Mostra sulla mappa Costo totale Nessun dato OFFIS EV Germania Contributo UE Nessun dato Indirizzo ESCHERWEG 2 000 OLDENBURG Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato POLITECHNIKA WARSZAWSKA Polonia Contributo UE Nessun dato Indirizzo PLAC POLITECHNIKI 1 WARSZAWA Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato POLITECNICO DI TORINO Contributo UE Nessun dato Indirizzo Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato STMICROELECTRONICS SA Francia Contributo UE Nessun dato Indirizzo 29 BOULEVARD ROMAIN ROLLAND 92120 MONTROUGE Mostra sulla mappa Costo totale Nessun dato UNIVERSITAT POLITECNICA DE CATALUNYA Contributo UE Nessun dato Indirizzo Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato