Ferroelectric Vertical Low energy Low latency low volume Modules fOr Neural network Transformers In 3D

Projektinformationen

FVLLMONTI

ID Finanzhilfevereinbarung: 101016776

DOI

10.3030/101016776

Projekt abgeschlossen

EK-Unterschriftsdatum 1 Dezember 2020

Startdatum 1 Januar 2021

Enddatum 31 August 2025

Finanziert unter

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Gesamtkosten

€ 4 760 060,00

EU-Beitrag

€ 4 760 060,00

Koordiniert durch

UNIVERSITE DE BORDEAUX
France

CORDIS bietet Links zu öffentlichen Ergebnissen und Veröffentlichungen von HORIZONT-Projekten.

Links zu Ergebnissen und Veröffentlichungen von RP7-Projekten sowie Links zu einigen Typen spezifischer Ergebnisse wie Datensätzen und Software werden dynamisch von OpenAIRE abgerufen.

Leistungen

Demonstrators, pilots, prototypes (2)

Elementary VNWFET devices (JL and PC) - V1

Fabrication of elementary VNWFET devices (JL and PC) - First version

Elementary VNWFET devices (JL and PC) - V2

Fabrication of elementary VNWFET devices (JL and PC) - improved version

Documents, reports (19)

Technology impact and exploitation innovation - Y3

Technology impact and exploitation innovation - Third assessment

Thermal impedance and trap extraction - V1

First report on the thermal impedance and trap extraction of VNWFETs devices fabricated in WP1

Plan for dissemination of the results - Y1

Annual plan for dissemination of the results

Workshops and summer school's report

Report on workshops and summer school's

Plan for dissemination of the results - Y2

Annual plan for dissemination of the results, year 2

Technology impact and exploitation innovation - Y1

Technology impact and exploitation innovation First assessment

Pre-trained speech ASR/MT model and use-cases - V2

Second version of pre-trained speech ASR/MT model and use-cases

Open source release: parameterizable simulator with application examples - V1

First open source release: parameterizable simulator with application examples

Plan for dissemination of the results - Y3

Annual plan for dissemination of the results - year 3

Scaled-down N2C2 design

Report on scaled-down N2C2 design

Library of optimized VNWFET-based logic cells
Pre-trained speech ASR/MT model and use-cases - V1

First version of pretrained speech ASRMT model and usecases

Architecture library, multi-objective trade-offs and calibrated thermal models - V1

First version of architecture library, multi-objective trade-offs and calibrated thermal models

Technology impact and exploitation innovation - Y2

Technology impact and exploitation innovation - Second assessment

Virtual scalable N2C2 design and Pareto-front data - V1

Report on virtual scalable N2C2 design and Paretofront data V1

Co-optimized hardware/NN architecture for ASR/MT - V1

First report on the co-optimized hardware/NN architecture for ASR/MT

Versatile and scalable 3D architectural interconnect framework

Report on the versatile and scalable 3D architectural interconnect framework

Project handbook

Handbook summarizing decisionmaking process and planned meetings quality process for deliverables deliverable template progress reports template

Parasitic element extraction - V1

Report on parasitic element extraction

Other (1)

Project Website and social network account

Project Website and social networks accounts for FVLLMONTI are visible online

Open Research Data Pilot (1)

Data Management Plan

Veröffentlichungen

Conference proceedings (33)

A 16-bit floating-point near-sram architecture for low-power sparse matrix-vector multiplication

Autoren: Eggermann, G., Rios, M., Ansaloni, G., Nassif, S. and Atienza, D.
Veröffentlicht in: In 2023 IFIP/IEEE 31st International Conference on Very Large-Scale Integration (VLSI-SoC) In 2023 IFIP/IEEE 31st International Conference on Very Large-Scale Integration (VLSI-SoC), 2023, ISBN 979-8-3503-2599-7
Herausgeber: IEEE
DOI: 10.1109/vlsi-soc57769.2023.10321838

Strategies for Characterization and Parameter Extraction of Vertical Junction-less Nanowire FETs dedicated to Design Technology Co-Optimization

Autoren: C. Maneux, C. Mukherjee, M. Deng, G. Larrieu, Y. Wang, Houssem Rezgui and B. Neckel Wesling
Veröffentlicht in: 243rd ECS Meeting, Boston, US, May 28th -June 2nd, 2023, Ausgabe mai-23, 2023
Herausgeber: ECS
DOI: 10.1149/11101.0209ecst

The 3D Neural Network Compute Cube (N2C2) Concept enabling Efficient Hardware Transformer Architectures towards Speech-to-Speech Translation

Autoren: I. O'Connor, S. Mannaa, A. Bosio, B. Deveautour, D. Deleruyelle, T. Obukhova, C. Marchand, J. Trommer, C. Cakirlar, B. Neckel Wesling, T. Mikolajick, O. Baumgartner, M. Thesberg, D. Pirker, C. Lenz, Z. Stanojevic, M. Karner, G. Larrieu, S. Pelloquin, K. Moustakas, J. Muller, G. Ansaloni, A. Amirshahi, D. Atienza, J-L. Rouas, L. Ben Letaifa, G. Bordea, C. Brazier, Y. Wang, C. Mukherjee, M. Deng, M.
Veröffentlicht in: In 27th Design, Automation and Test in Europe Conference (DATE 24), Multi-partner projects (MPP) papers, 2024
Herausgeber: CESI

Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors

Autoren: L. Réveil, C. Mukherjee, C. Maneux, M. Deng, F. Marc, A. Kumar, A. Lecestre, G. Larrieu, A. Poittevin, I. O'Connor, O. Baumgartner and D. Pirker
Veröffentlicht in: VLSI-SOC, Ausgabe 2022, 2022
Herausgeber: VLSI-SOC

Reconfigurable field effect transistors: A technology enablers perspective

Autoren: T. Mikolajick, G. Galderisi, S. Rai, M. Simon, R. Böckle, M. Sistani, C. Cakirlar, N. Bhattacharjee, T. Mauersberger, A. Heinzig, A. Kumar, W.M. Weber, J. Trommer.
Veröffentlicht in: Solid-State Electronics, 2022
Herausgeber: Elsevier
DOI: 10.1016/j.sse.2022.108381

Challenges in Electron Beam Lithography of Silicon Nanostructures

Autoren: C Cakirlar, G Galderisi, C Beyer, M Simon, T Mikolajick, J Trommer
Veröffentlicht in: IEEE 22nd International Conference on Nanotechnology (IEEE NANO), 2022, ISBN 978-1-6654-5225-0
Herausgeber: IEEE
DOI: 10.1109/nano54668.2022.9928629

Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design

Autoren: Y. Wang, C. Mukherjee. H. Rezgui, M. Deng, C. Maneux, S. Mannaa, I. O’Connor, J. Müller, S. Pelloquin, G. Larrieu
Veröffentlicht in: European Solid-State Device Research Conference (ESSDERC), Ausgabe 2023, 2023
Herausgeber: IEEE
DOI: 10.1109/essderc59256.2023.10268560

Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For the Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization

Autoren: Thesberg, M., Schanovsky, F., Stanojevic, Z., Baumgartner, O. and Karner, M.
Veröffentlicht in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Ausgabe 2023, 2023, ISBN 978-4-86348-803-8
Herausgeber: IEEE
DOI: 10.23919/sispad57422.2023.10319645

Error Resilient In-Memory Computing Architecture for CNN Inference on the Edge

Autoren: Rios, M., Ponzina, F., Ansaloni, G., Levisse, A. and Atienza, D.
Veröffentlicht in: In Proceedings of the Great Lakes Symposium on VLSI 2022, Ausgabe 2022, 2022, ISBN 9781450393225
Herausgeber: Association for Computing Machinery
DOI: 10.1145/3526241.3530351

Using Algorithmic Transformations and Sensitivity Analysis to Unleash Approximations in CNNs at the Edge

Autoren: Ponzina, F., Ansaloni, G., Peón-Quirós, M. and Atienza, D.
Veröffentlicht in: Micromachines, 2023
Herausgeber: MDPI
DOI: 10.3390/mi13071143

Advanced contacts on 3D nanostructured channels for vertical transport gate-all-around transistors

Autoren: Guilhem Larrieu, Jonas Müller, Sylvain Pelloquin, Abhishek Kumar, Konstantinos Moustakas, Pawel Michalowski, Aurelie Lecestre
Veröffentlicht in: 21st International Workshop on Junction Technology (IWJT), Ausgabe 23 juin, 2023, ISBN 978-4-86348-807-6
Herausgeber: IEEE
DOI: 10.23919/iwjt59028.2023.10175172

Layer-Wise Learning Framework for Efficient DNN Deployment in Biomedical Wearable Systems

Autoren: Baghersalimi, S., Amirshahi, A., Teijeiro, T., Aminifar, A. and Atienza, D.
Veröffentlicht in: 2023 IEEE 19th International Conference on Body Sensor Networks (BSN), 2023, ISBN 979-8-3503-3841-6
Herausgeber: IEEE
DOI: 10.1109/bsn58485.2023.10331334

Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

Autoren: Ian O’Connor, Arnaud Poittevin, Sébastien Le Beux, Alberto Bosio, Zlatan Stanojevic, Oskar Baumgartner, C Mukherjee, C Maneux, J Trommer, T Mikolajick, G Larrieu
Veröffentlicht in: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, Seite(n) 1-4
Herausgeber: NA

Variable Scale Pruning for Transformer Model Compression in End-to-End Speech Recognition

Autoren: L. Ben Letaifa and J.-L. Rouas
Veröffentlicht in: Algorithms Vol 16 n°9, 2023
Herausgeber: MDPI
DOI: 10.3390/a16090398

INCLASS: incremental classification strategy for self-aware epileptic seizure detection

Autoren: Ferretti, Lorenzo, Giovanni Ansaloni, Renaud Marquis, Tomas Teijeiro, Philippe Ryvlin, David Atienza, and Laura Pozzi
Veröffentlicht in: Design, Automation & Test in Europe Conference & Exhibition (DATE), 2022, Seite(n) 1449-1454
Herausgeber: IEEE

VNWFET-based technology: from device modelling to standard cell library

Autoren: S. Mannaa, C. Marchand, D. Deleruyelle, B. Deveautour, I. O'Connor, A. Bosio
Veröffentlicht in: Int. Conf. Nanotechnology (NANO), 2023
Herausgeber: IEEE
DOI: 10.1109/nano58406.2023.10231288

Extraction of small signal equivalent circuit for de−embedding of 3D vertical nanowire transistor

Autoren: B. Neckel Wesling, M. Deng, C. Mukherjee, A. Kumar, G. Larrieu, et al.
Veröffentlicht in: 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI−ULIS) 2022, May, Ausgabe mai 22, 2022
Herausgeber: Elsevier
DOI: 10.1016/j.sse.2022.108359

Full System Exploration of On-Chip Wireless Communication on Many-Core Architectures

Autoren: Medina Morillas, Rafael, Joshua Alexander Harrison Klein, Yasir Mahmood Qureshi, Marina Zapater Sancho, Giovanni Ansaloni, and David Atienza Alonso
Veröffentlicht in: IEEE 13th Latin America Symposium on Circuits and System (LASCAS), 2022
Herausgeber: IEEE

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

Autoren: C. Maneux, C. Mukherjee, M. Deng, M. Dubourg, L. Reveil, G. Bordea, A. Lecestre, G. Larrieu, J. Trommer, E.T. Breyer, S. Slesazeck, T. Mikolajick, O. Baumgartner, M. Karner, D. Pirker, Z. Stanojevic, David Atienza, A. Levisse, G. Ansaloni, A. Poittevin, A. Bosio, D. Deleruyelle, C. Marchand, I. O'Connor
Veröffentlicht in: IEEE IEDM, 2021
Herausgeber: IEEE

REMOTE: Re-thinking Task Mapping on Wireless 2.5D Systems-on-Package for Hotspot Removal

Autoren: Medina, R., Huang, D., Ansaloni, G., Zapater, M. and Atienza, D.
Veröffentlicht in: 2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration (VLSI-SoC), 2023, ISBN 979-8-3503-2599-7
Herausgeber: IEEE
DOI: 10.1109/vlsi-soc57769.2023.10321912

Transformer model compression for end-to-end speech recognition on mobile devices

Autoren: Leila Ben Letaifa, Jean-Luc Rouas.
Veröffentlicht in: EUSIPCO 2022, 2022
Herausgeber: EUSIPCO

Circuit Design Flow dedicated to 3D vertical nanowire FET

Autoren: C. Maneux, C. Mukherjee, M. Deng, B. Neckel Wesling, L. Reveil, Z. Stanojevic, O. baumgartner, A. Poittevin, I. O'Connor, G. Larrieu
Veröffentlicht in: IEEE LAEDC, 2022
Herausgeber: NA

A Logic Cell Design and routing Methodology Specific to VNWFET

Autoren: A. Poittevin, I. O‘Connor, C. Marchand, A. Bosio, C. Maneux, C. Mukherjee, G. Larrieu, A. Kumar
Veröffentlicht in: 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022
Herausgeber: NA
DOI: 10.1109/newcas52662.2022.9842100

Demonstration of a p-type Junctionless Silicon Nanowire Transistor with Ferroelectric Hafnium-Zirkonium-Oxide Gate

Autoren: T. Mauersberger, J. Trommer, G. Galderisi, M. Knaut, D. Pohl, A. Tahn, B. Rellinghaus, T. Mikolajick, A. Heinzig
Veröffentlicht in: EMRS Fall Meeting, Warsaw, 2023, Ausgabe No proceedings, talk only, 2023
Herausgeber: EMRS

Advancements in HZO Layer Engineering for Ultimate 3D Vertical Transistors : Towards a Logic-In-Memory Application

Autoren: K. Moustakas, B. Neckel-Wesling, A. Lecestre, F. Mathieu, T. Mikolajick, J. Trommer, G. Larrieu, L. Cancellara, J.-D. Grillet
Veröffentlicht in: EMRS Fall Meeting, Warsaw, 2023, Ausgabe 23-oct., 2023
Herausgeber: EMRS

Energy-Efficient Computation-In-Memory Architecture Using Emerging Technologies

Autoren: R. Bishnoi, S. Diware, A. Gebregiorgis, S. Thomann, S. Mannaa, B. Deveautour, C. Marchand, A. Bosio, D. Deleruyelle, I. O'Connor, H. Amrouch, S. Hamdioui
Veröffentlicht in: International Conference on Microelectronics (ICM), 2023
Herausgeber: IEEE
DOI: 10.1109/icm60448.2023.10378889

TiC-SAT: Tightly-coupled Systolic Accelerator for Transformers

Autoren: Amirshahi A, Klein JA, Ansaloni G, Atienza D.
Veröffentlicht in: InProceedings of the 28th Asia and South Pacific Design Automation Conference 2023, 2023, ISBN 978-1-4503-9783-4
Herausgeber: IEEE

System-Level Exploration of In-Package Wireless Communication for Multi-Chiplet Platforms

Autoren: Medina R, Kein J, Ansaloni G, Zapater M, Abadal S, Alarcón E, Atienza D.
Veröffentlicht in: In Proceedings of the 28th Asia and South Pacific Design Automation Conference 2023 Jan 16, 2023, ISBN 978-1-4503-9783-4
Herausgeber: IEEE

Understanding the substrate effect on de-embedding structures fabricated on SOI wafers using electromagnetic simulation

Autoren: B. Neckel Wesling, M. Deng, C. Mukherjee, T. Mikolajick, J. Trommer and C. Maneux
Veröffentlicht in: IEEE International Conference on Microelectronic Test Structures (ICMTS), April 2024, Edinburgh, Scotland, Ausgabe Avr 24, 2024
Herausgeber: IEEE

Thermal consideration in nanoscale gate-all-around vertical transistors

Autoren: Guilhem Larrieu, Houssem Rezgui, Abhishek Kumar, Jonas Müller, Sylvain Pelloquin, Yifan Wang, Marina Deng, Aurelie Lecestre, Cristell Maneux, Chhandak Mukherjee
Veröffentlicht in: 2023 Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, Ausgabe juin-23, 2023, ISBN 978-4-86348-808-3
Herausgeber: IEEE
DOI: 10.23919/snw57900.2023.10183951

A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model

Autoren: Thesberg M, Schanovsky F, Stanojević Z, Baumgartner O, Karner M.
Veröffentlicht in: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2023, ISBN 979-8-3503-0423-7
Herausgeber: IEEE
DOI: 10.1109/essderc59256.2023.10268518

INCLASS: Incremental Classification Strategy for Self-Aware Epileptic Seizure Detection

Autoren: Lorenzo Ferretti; Giovanni Ansaloni; Renaud Marquis; Tomas Teijeiro; Philippe Ryvlin; David Atienza; Laura Pozzi
Veröffentlicht in: 2022 Design, Automation & Test in Europe Conference & Exhibition (DATE), Ausgabe 1, 2022, Seite(n) 1449-1454
Herausgeber: IEEE
DOI: 10.23919/date54114.2022.9774713

Fine-grained analysis of the transformer model for efficient pruning

Autoren: L. Ben Letaifa and J.-L. Rouas
Veröffentlicht in: 21st IEEE International Conference on Machine Learning and Applications (ICMLA), Dec. 2022, Ausgabe 2022, 2022
Herausgeber: IEEE
DOI: 10.1109/icmla55696.2022.00149

Peer reviewed articles (11)

Overflow-free compute memories for edge AI acceleration

Autoren: Ponzina F, Rios M, Levisse A, Ansaloni G, Atienza D.
Veröffentlicht in: ACM Transactions on Embedded Computing Systems, Ausgabe ACM Transactions on Embedded Computing SystemsVolume 22Ausgabe 5sArticle No.: 121, 2023, Seite(n) pp 1–23, ISSN 1539-9087
Herausgeber: Association for Computing Machinary, Inc.
DOI: 10.1145/3609387

On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment

Autoren: M. Thesberg, M. N. K. Alam, B. Truijen, B. Kaczer, P. J. Roussel, Z. Stanojević, O. Baumgartner, F. Schanovsky, M. Karner, H. Kosina
Veröffentlicht in: IEEE TED Vol 69, n°6, 2022, 2022, ISSN 0018-9383
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2022.3167942

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Autoren: Tom Mauersberger; Jens Trommer; Saurabh Sharma; Martin Knaut; Darius Pohl; Bernd Rellinghaus; Thomas Mikolajick; Andre Heinzig
Veröffentlicht in: Semiconductor Science and Technology, Ausgabe 1, 2021, ISSN 0268-1242
Herausgeber: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ac1827

A hardware/software co-design vision for deep learning at the edge

Autoren: Ponzina, Flavio, Simone Machetti, Marco Antonio Rios, Benoît Walter Denkinger, Alexandre Sébastien Julien Levisse, Giovanni Ansaloni, Miguel Peon Quiros, and David Atienza Alonso
Veröffentlicht in: IEEE Micro - Special Ausgabe on Artificial Intelligence at the Edge, 2022, ISSN 0272-1732
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mm.2022.3195617

Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design

Autoren: Mukherjee, C., Poittevin, A., O'Connor, I., Larrieu, G., Maneux, C.
Veröffentlicht in: Solid-State Electronics, 2021, ISSN 0038-1101
Herausgeber: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108125

On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices

Autoren: Mischa Thesberg, Tetiana Obukhova, Damien Deleruyelle, Jens Trommer, Thomas Mikolajick, Oskar Baumgartner, Franz Schanovsky, Zlatan Stanojević, Markus Karner
Veröffentlicht in: IEEE Transactions on Electron Devices, Ausgabe 71, 2024, Seite(n) 6686-6690, ISSN 0018-9383
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2024.3459878

Cross-Shape Reconfigurable Field Effect Transistor for Flexible Signal Routing

Autoren: C. Cakirlar, M. Simon, G. Galderisi, I. O’Connor, T. Mikolajick, J. Trommer
Veröffentlicht in: Materials Today Electronics, Ausgabe Volume 4, June 2023, 100040, 2023, ISSN 2772-9494
Herausgeber: Elsevier
DOI: 10.1016/j.mtelec.2023.100040

Nanoscale Thermal Transport in Vertical Gate-all-around Junction-less Nanowire Transistors - Part I: Experimental Methods

Autoren: C. Mukherjee, H. Rezgui, Y. Wang, M. Deng, A. Kumar, J. Muller, G. Larrieu and C. Maneux
Veröffentlicht in: IEEE TED Vol 70 n°12, Ausgabe 11 oct, 2023, ISSN 0018-9383
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3321277

Bit-Line Computing for CNN Accelerators Co-Design in Edge AI Inference

Autoren: Rios, M., Ponzina, F., Levisse, A.S.J., Ansaloni, G., Alonso, D.A., Amirshahi, A., Klein, J.A.H., Orlandi, M., Zanghieri, M., Schiavone, D. and Donati, E.,
Veröffentlicht in: IEEE Transactions on Emerging Topics in Computing ( Volume: 11, Ausgabe: 2, 01 April-June 2023), 2023, ISSN 2168-6750
Herausgeber: IEEE Computer Society
DOI: 10.1109/tetc.2023.3237914

3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs

Autoren: R. Bishnoi, S. Diware, A. Gebregiorgis, S. Thomann, S. Mannaa, B. Deveautour, C. Marchand, A. Bosio, D. Deleruyelle, I. O'Connor, H. Amrouch, S. Hamdioui
Veröffentlicht in: J. Exploratory Solid-State Computational Devices and Circuits, 2023, ISSN 2329-9231
Herausgeber: IEEE
DOI: 10.1109/jxcdc.2023.3309502

Nanoscale Thermal Transport in Vertical Gate-all-around Junction-less Nanowire Transistors- Part II: Multiphysics Simulation

Autoren: H. Rezgui, C. Mukherjee, Y. Wang, M. Deng, A. Kumar, J. Muller, G. Larrieu and C. Maneux
Veröffentlicht in: IEEE TED Vol 70 n°12, Ausgabe oct.-23, 2023, ISSN 0018-9383
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3321280