Dispersion force masked-based helium atom lithography

Informacje na temat projektu

FabouLACE

Identyfikator umowy o grant: 101136719

DOI

10.3030/101136719

Data podpisania przez KE 31 Października 2023

Data rozpoczęcia 1 Grudnia 2023

Data zakończenia 30 Listopada 2026

Finansowanie w ramach

• The European Innovation Council (EIC)

Koszt całkowity

€ 2 499 397,00

Wkład UE

€ 2 499 397,00

Koordynowany przez

LACE LITHOGRAPHY AS
Norway

Periodic Reporting for period 1 - FabouLACE (Dispersion force masked-based helium atom lithography)

Okres sprawozdawczy: 2023-12-01 do 2024-11-30

Podsumowanie kontekstu i ogólnych celów projektu

The semiconductor industry is one of the major industrial drivers in the world, of immense financial and economical importance. Several of the world's most valuable companies are directly linked to products produced by the semiconductor industry. It is also of immense political importance. The objective of this project is to contribute to the development of new technology that can facilitate the production of microchips. This requires computational as well as experimental work. The project aims to take the technology to the next TRL level, in preparation for future upscaling and industrial production. A further aim of the project is to map application areas, talk to end-users and secure venture capital.

Prace wykonane od początku projektu do końca okresu sprawozdawczego oraz najważniejsze dotychczasowe rezultaty

The project has successfully developed the computational work needed to demonstrate the new technological approach. The equipment required for experimental testing is nearly completed. First work has been done on the best approach for industrial upscaling and marketing has been considered. The procurement of substantial venture capital is another major achievement.

Innowacyjność oraz oczekiwany potencjalny wpływ (w tym dotychczasowe znaczenie społeczno-gospodarcze i szersze implikacje społeczne projektu)

Venture capital from private investors has successfully been procured.