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Rf Engineered substrates to FostER fEm performaNCE



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"REFERENCE Project Workshop #1"


Multi-band dual-mode antenna tunable matching network for broadband applications

Autorzy: F. Chan Wai Po, R. Abdaoui, A. Giry
Opublikowane w: 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2016, Strona(/y) 492-495, ISBN 978-1-5090-6113-6
Wydawca: IEEE
DOI: 10.1109/ICECS.2016.7841246

A 130-nm SOI CMOS reconfigurable multimode multiband power amplifier for 2G/3G/4G handset applications

Autorzy: Pierre Ferris, Gauthier Tant, Alexandre Giry, J. D. Arnould, J. M. Fournier
Opublikowane w: 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016, Strona(/y) 254-257, ISBN 978-1-4673-8651-7
Wydawca: IEEE
DOI: 10.1109/RFIC.2016.7508299

Study of SOI CMOS tunable capacitor architectures and application to antenna aperture tuning

Autorzy: Dominique Nicolas, Alexandre Giry, Essia Ben Abdallah, Serge Bories, Thierry Parra, Christophe Delaveaud, Pierre Vincent
Opublikowane w: 2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, Strona(/y) 1-4, ISBN 978-1-5090-0698-4
Wydawca: IEEE
DOI: 10.1109/MWSYM.2016.7538835

Système de Détection d'impédance en technologie CMOS SOI pour accord d'antennes

Autorzy: D. Nicolas, A. Serhan , P. Ferris, A. Giry, T. Parra
Opublikowane w: Journées Nationales Micro-ondes, Numer Mai, 2017
Wydawca: Journées Nationales Micro-ondes

A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier

Autorzy: D. Nicolas, A. Serhan, A. Giry, T. Parra, E. Mercier
Opublikowane w: 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, Strona(/y) 15-18, ISBN 978-1-5090-4626-3
Wydawca: IEEE
DOI: 10.1109/RFIC.2017.7969005

RF SOI Technology for PA/FEM Integration

Autorzy: A. Giry, A. Serhan, P. Ferris
Opublikowane w: 2017
Wydawca: IEEE

Output matching network design for broadband class B/J power amplifier

Autorzy: Saad Boutayeb, Alexandre Giry, Ayssar Serhan, Jean-Daniel Arnould, Estelle Lauga-Larroze
Opublikowane w: 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2017, Strona(/y) 41-44, ISBN 978-1-5090-6508-0
Wydawca: IEEE
DOI: 10.1109/PRIME.2017.7974102

RFSOI for Tunable RF

Autorzy: A. Giry
Opublikowane w: Numer Mars, 2017
Wydawca: GDR Ondes - GT4

Output Matching Network Design for Class B/J PA

Autorzy: S. Boutayeb
Opublikowane w: Numer Mars, 2017
Wydawca: GDR Ondes - GT4

Broadband SOI PA with tunable matching network for improved LTE performances under high VSWR

Autorzy: Ayssar Serhan, Pierre Ferris, Alexandre Giry
Opublikowane w: 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2016, Strona(/y) 488-491, ISBN 978-1-5090-6113-6
Wydawca: IEEE
DOI: 10.1109/ICECS.2016.7841245

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Autorzy: Yeghoyan Taguhi, Alassaad Kassem, McMitchell Sean R.C., Gutierrez Marina, Souliere Véronique, Araujo Daniel, Ferro Gabriel
Opublikowane w: Materials Science Forum, Numer Vol. 924, 2018, Strona(/y) 128-131
Wydawca: Trans Tech Publications

Silicon Deposition on 3C-SiC Seeds of Different Orientations

Opublikowane w: Materials Science Forum, Numer Vol. 897, 2017, Strona(/y) 87-90
Wydawca: Trans tech publications

RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates

Autorzy: Lei Zhu, Shuangke Liu, F. Allibert, E. Desbonnets, I. Radu, Xinen Zhu, Yumin Lu
Opublikowane w: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, Strona(/y) 1-2, ISBN 978-1-4673-9478-9
Wydawca: IEEE
DOI: 10.1109/VLSI-TSA.2016.7480530

A 28-GHz transceiver front-end with T/R switching achieving 11.2-dBm OP<inf>1dB</inf>, 33.8% PAE<inf>max</inf> and 4-dB NF in 22-nm FD-SOI for 5G communication

Autorzy: Yao Liu, Giovanni Mangraviti, Shinya Hitomi, Khaled Khalaf, Bjorn Debaillie, Piet Wambacq
Opublikowane w: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Numer Date of Conference: 15-18 Oct. 2018, 2018, Strona(/y) 1-3, ISBN 978-1-5386-7627-1
Wydawca: IEEE
DOI: 10.1109/s3s.2018.8640209

Enabling 5G — A substrate material perspective: AEM, ET/ID

Autorzy: Ionut Radu, Eric Desbonnets, Manuel Sellier, Christophe Didier
Opublikowane w: 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Numer Date of Conference: 30 April-3 May 2018, 2018, Strona(/y) 143-147, ISBN 978-1-5386-3748-7
Wydawca: IEEE
DOI: 10.1109/asmc.2018.8373174

SOI Wafer Technology for Advanced Mos Applications

Autorzy: Oleg Kononchuk, Didier Landru, Damien Massy, Nadia Ben Mohamed, Youngpil Kim, Pablo Acosta-Alba and François Rieutord
Opublikowane w: 236th ECS meetings, Numer Oct 3rd 2018, 2018
Wydawca: © 2018 ECS - The Electrochemical Society

(Invited) Substrate and Device Engineering for IoT and Automotive

Autorzy: Manuel Sellier
Opublikowane w: ECS Transactions, Numer 85/8, 2018, Strona(/y) 3-13, ISSN 1938-5862
Wydawca: Electrochemical Society, Inc.
DOI: 10.1149/08508.0003ecst

RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature

Autorzy: Lei Zhu, Shuangke Liu, Frederic Allibert, Ionut Radu, Xinen Zhu, Yumin Lu, Xi Wang
Opublikowane w: IEEE Microwave and Wireless Components Letters, Numer 28/5, 2018, Strona(/y) 377-379, ISSN 1531-1309
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2813884

RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates

Autorzy: Babak Kazemi Esfeh, Martin Rack, Khaled Ben Ali, Frederic Allibert, Jean-Pierre Raskin
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/8, 2018, Strona(/y) 3120-3126, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2845679

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