Rezultaty Documents, reports (7) Report on the breakdown of optical and electrical losses in IBC-SHJ solar cells and optimization strategies Quantitative loss analysis (parasitic absorption, resistive losses, and optical reflection) relying on the results from advanced characterization methods, including photoelectron yield spectroscopy, will address interface defects (with sensitivity better than 1 defect per 1000 atoms) and resulting recombination losses at the cSi interfaces, limiting the achievable Voc and efficiency. Fabrication and delivery of 2500 high quality n-type Cz wafer per year A total of 5000 high-quality c-Si wafers will be fabricated in two batches of 2500 (within M12 and within M24). Lifetime over resistivity ratio and resistivity will be constantly monitored to be higher than 2 ms/Ohm.cm and in the range between 1 – 2 ohm.cm, respectively. Reports on optical characterization of comb finger shapes with guidelines for use by other WPs The work aims to provide non-contact tool for optimization of the IBC scheme. Its sensitivity (estimated at thickness resolution to below 1 nm) and spatial resolution limits (below 500 nm) will be assessed on both smooth and rough test samples for a-Si:H as well as novel mate-rials for contact stacks (doped mc-Si:H and mc-SiOx:H, TMOs). Textured c-Si exhibiting low reflectance (<5%) and implied current density beyond 41.5 mA/cm2 Textured c-Si wafers enable the optimal absorption of light inside the solar cell. Single and double-side pyramidal texturing and single sided modulated surface texturing will be tested. Reflectance spectrum and implied current density will be measured, seeking for benchmark values, such as <5% and 41.5 mA/cm2, respectively. Report on the rear design of high efficiency IBC-SHJ solar cells Report on the rear design of high efficiency IBC-SHJ solar cells, including novel contact stacks, their patterning on both structured and flattened back side, reflector structures and other innovative approaches used in the NextBase will be simulated in 1D – 3D simulations in AFORS-HET, ASA, Quokka and Sentau-rus tools. Report on the energy yield of IBC-SHJ-based PV modules in both mono-and bi-facial configurations Report on the yearly energy yield estima-tion of IBC-SHJ-based full-size PV modules in both mono-and bi-facial configurations incorporating optical model from T8.3 and module materials defined by WP7 as well as EU climate input. Report on a pathway to reach the efficiencies defined in the project goals, and beyond The NextBase targets world-record efficiencies > 26% at cell level and > 22% at module level. This report will summarize lessons learned during the above described WP8 studies as guidance for the final period of the project effort. Other (2) Project identity: website, templates, flyer with general project information for dissemination. Database for Dissemination Report presenting the results on D2.1. This document is related to task T2.1. Newsletter for project new developments and results after each year Report presenting the results on D2.6. This document is related to task T2.2. Demonstrators, pilots, prototypes (4) IBC-SHJ cells processing with a throughput >10 wafers/hour Production of IBC SHJ precursors and cells. IBC-SHJ device with efficiency ≥ 26.0% on 6-in wafer This milestone aims at processing an IBC-SHJ device on a 6-in wafer, with an efficiency ≥ 26.0%, using the best processes and materials developed in WP4 and WP5. The achievement of this milestone will be certified by sending one or more devices to a certification laboratory for a calibrated I-V measurement (e.g. Fraunhofer ISE CalLab). IBC devices with TMO based contact stacks with Voc>740 mV and FF>82% In this deliverable we aim at the demonstration of high-efficiency solar cells, employing novel TMO based contact stacks, which are developed in task T4.2. The fabricated devices will be characterized by 1-sun I-V measurements. The success or failure of this deliverable will be determined by the measured electrical parameters. IBC devices employing a-Si:H and c-Si:H based contact stacks with Voc>740 mV and FF>82% The aim of this deliverable is the achievement of high-efficiency solar cell devices employing novel a-Si:H and uc-Si:H based contact stacks, which are developed in task T4.1. The devices will be characterized by 1-sun I-V measurements and the success, or failure, of this deliverable will be determined by the measured electrical parameters. Publikacje Peer reviewed articles (25) Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing Autorzy: B. Paviet-Salomon, A. Tomasi, D. Lachenal, N. Badel, G. Christmann, L. Barraud, A. Descœudres, J. Geissbühler, A. Faes, Q. Jeangros, J.P. Seif, S. Nicolay, B. Strahm, S. De Wolf, C. Ballif, M. Despeisse Opublikowane w: Solar Energy, 2018, ISSN 0038-092X Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.solener.2018.01.066 Sputtered Tungsten Oxide as Hole Contact for Silicon Heterojunction Solar Cells Autorzy: Mathias Mews, Antoine Lemaire, Lars Korte Opublikowane w: IEEE Journal of Photovoltaics, Issue 7/5, 2017, Page(s) 1209-1215, ISSN 2156-3381 Wydawca: IEEE Electron Devices Society DOI: 10.1109/JPHOTOV.2017.2714193 Aluminium metallisation for interdigitated back-contact silicon heterojunction solar cells Autorzy: Johann-Christoph Stang, Jan Haschke, Mathias Mews, Agnes Merkle, Robby Peibst, Bernd Rech, Lars Korte Opublikowane w: Japanese Journal of Applied Physics, Issue 56/8S2, 2017, Page(s) 08MB22, ISSN 1347-4065 Wydawca: The Japan Society of Applied Physics DOI: 10.7567/JJAP.56.08MB22 Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear-emitter silicon heterojunction solar cells Autorzy: L. Mazzarella, A.B. Morales-Vilches, L. Korte, R. Schlatmann, B. Stannowski Opublikowane w: Solar Energy Materials and Solar Cells, Issue 179, 2018, Page(s) 386-391, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2018.01.034 Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon Autorzy: Dorothee Menzel, Mathias Mews, Bernd Rech, Lars Korte Opublikowane w: Applied Physics Letters, Issue 112/1, 2018, Page(s) 011602, ISSN 0003-6951 Wydawca: American Institute of Physics DOI: 10.1063/1.5010278 Optimized Metallization for Interdigitated Back Contact Silicon Heterojunction Solar Cells Autorzy: Johann-Christoph Stang, Thijs Franssen, Jan Haschke, Mathias Mews, Agnes Merkle, Robby Peibst, Bernd Rech, Lars Korte Opublikowane w: Solar RRL, Issue 1/3-4, 2017, Page(s) 1700021, ISSN 2367-198X Wydawca: WILEY-VCH Verlag GmbH & Co. KGaA DOI: 10.1002/solr.201700021 ITO-free metallization for interdigitated back contact silicon heterojunction solar cells Autorzy: Johann-Christoph Stang, Max-Sebastian Hendrichs, Agnes Merkle, Robby Peibst, Bernd Stannowski, Lars Korte, Bernd Rech Opublikowane w: Energy Procedia, Issue 124, 2017, Page(s) 379-383, ISSN 1876-6102 Wydawca: Elsevier DOI: 10.1016/j.egypro.2017.09.253 Damage-free Ablation Process for Back-contacted Silicon Heterojunction Solar Cells Autorzy: Singh, A; Turan, B.; Haas, S.; Lambertz, A.; Ding, K.; Rau, U. Opublikowane w: Journal of Laser Micro/Nanoengineering, 2018, ISSN 1880-0688 Wydawca: Japan Laser Processing DOI: 10.2961/jlmn.2018.03.0029 Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells Autorzy: Guangtao Yang, Peiqing Guo, Paul Procel, Arthur Weeber, Olindo Isabella, Miro Zeman Opublikowane w: Applied Physics Letters, Issue 112/19, 2018, Page(s) 193904, ISSN 0003-6951 Wydawca: American Institute of Physics DOI: 10.1063/1.5027547 Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition Autorzy: Päivikki Repo, Antti Haarahiltunen, Lauri Sainiemi, Marko Yli-Koski, Heli Talvitie, Martin C. Schubert, Hele Savin Opublikowane w: IEEE Journal of Photovoltaics, Issue 3/1, 2013, Page(s) 90-94, ISSN 2156-3381 Wydawca: IEEE Electron Devices Society DOI: 10.1109/jphotov.2012.2210031 Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts Autorzy: Paul Procel, Guangtao Yang, Olindo Isabella, Miro Zeman Opublikowane w: IEEE Journal of Photovoltaics, Issue 9/2, 2019, Page(s) 374-384, ISSN 2156-3381 Wydawca: IEEE Electron Devices Society DOI: 10.1109/jphotov.2019.2892527 Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells Autorzy: Yong Liu, Manuel Pomaska, Weiyuan Duan, Do Yun Kim, Malte Köhler, Uwe Breuer, Kaining Ding Opublikowane w: Advanced Engineering Materials, 2019, Page(s) 1900613, ISSN 1438-1656 Wydawca: John Wiley & Sons Ltd. DOI: 10.1002/adem.201900613 Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime Autorzy: Eddy Simoen, Hariharsudan Sivaramakrishnan Radhakrishnan, Md. Gius Uddin, Ivan Gordon, Jef Poortmans, Chong Wang, Wei Li Opublikowane w: Journal of Vacuum Science & Technology B, Issue 36/4, 2018, Page(s) 041201, ISSN 2166-2754 Wydawca: AVS Science and Technology Society DOI: 10.1116/1.5026529 A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23% Autorzy: Hariharsudan Sivaramakrishnan Radhakrishnan, M.D. Gius Uddin, Menglei Xu, Jinyoun Cho, Moustafa Ghannam, Ivan Gordon, Jozef Szlufcik, Jef Poortmans Opublikowane w: Progress in Photovoltaics: Research and Applications, Issue 27/11, 2018, Page(s) 959-970, ISSN 1062-7995 Wydawca: John Wiley & Sons Inc. DOI: 10.1002/pip.3101 Low-Temperature $p$-Type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells Autorzy: Angela N. Fioretti, Mathieu Boccard, Raphael Monnard, Christophe Ballif Opublikowane w: IEEE Journal of Photovoltaics, Issue 9/5, 2019, Page(s) 1158-1165, ISSN 2156-3381 Wydawca: IEEE Electron Devices Society DOI: 10.1109/jphotov.2019.2917550 Low-temperature processes for passivation and metallization of high-efficiency crystalline silicon solar cells Autorzy: A. Descoeudres, C. Allebé, N. Badel, L. Barraud, J. Champliaud, G. Christmann, F. Debrot, A. Faes, J. Geissbühler, J. Horzel, A. Lachowicz, J. Levrat, S. Martin de Nicolas, S. Nicolay, B. Paviet-Salomon, L.-L. Senaud, C. Ballif, M. Despeisse Opublikowane w: Solar Energy, Issue 175, 2018, Page(s) 54-59, ISSN 0038-092X Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.solener.2018.01.074 Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation Autorzy: Menglei Xu, Twan Bearda, Miha Filipič, Hariharsudan Sivaramakrishnan Radhakrishnan, Ivan Gordon, Jozef Szlufcik, Jef Poortmans Opublikowane w: Solar Energy Materials and Solar Cells, Issue 186, 2018, Page(s) 78-83, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2018.06.027 Profilometry of thin films on rough substrates by Raman spectroscopy Autorzy: Martin Ledinský, Bertrand Paviet-Salomon, Aliaksei Vetushka, Jonas Geissbühler, Andrea Tomasi, Matthieu Despeisse, Stefaan De Wolf , Christophe Ballif , Antonín Fejfar Opublikowane w: Scientific Reports, Issue 6/1, 2016, ISSN 2045-2322 Wydawca: Nature Publishing Group DOI: 10.1038/srep37859 High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts Autorzy: Guangtao Yang, Peiqing Guo, Paul Procel, Gianluca Limodio, Arthur Weeber, Olindo Isabella, Miro Zeman Opublikowane w: Solar Energy Materials and Solar Cells, Issue 186, 2018, Page(s) 9-13, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2018.06.019 Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage Autorzy: Menglei Xu, Twan Bearda, Hariharsudan S. Radhakrishnan, Miha Filipič, Ivan Gordon, Maarten Debucquoy, Jozef Szlufcik, Jef Poortmans Opublikowane w: physica status solidi (RRL) - Rapid Research Letters, Issue 11/9, 2017, Page(s) 1700125, ISSN 1862-6254 Wydawca: Wiley - VCH Verlag GmbH & CO. KGaA DOI: 10.1002/pssr.201700125 Optimization of tunnel-junction IBC solar cells based on a series resistance model Autorzy: D. Lachenal, P. Papet, B. Legradic, R. Kramer, T. Kössler, L. Andreetta, N. Holm, W. Frammelsberger, D.L. Baetzner, B. Strahm, L.L. Senaud, J.W. Schüttauf, A. Descoeudres, G. Christmann, S. Nicolay, M. Despeisse, B. Paviet-Salomon, C. Ballif Opublikowane w: Solar Energy Materials and Solar Cells, Issue 200, 2019, Page(s) 110036, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2019.110036 Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency Autorzy: Daniel Meza, Alexandros Cruz, Anna Morales-Vilches, Lars Korte, Bernd Stannowski Opublikowane w: Applied Sciences, Issue 9/5, 2019, Page(s) 862, ISSN 2076-3417 Wydawca: MDPI DOI: 10.3390/app9050862 Aluminium-Doped Zinc Oxide Rear Reflectors for High-Efficiency Silicon Heterojunction Solar Cells Autorzy: Laurie-Lou Senaud, Gabriel Christmann, Antoine Descoeudres, Jonas Geissbuhler, Loris Barraud, Nicolas Badel, Christophe Allebe, Sylvain Nicolay, Matthieu Despeisse, Bertrand Paviet-Salomon, Christophe Ballif Opublikowane w: IEEE Journal of Photovoltaics, Issue 9/5, 2019, Page(s) 1217-1224, ISSN 2156-3381 Wydawca: IEEE Electron Devices Society DOI: 10.1109/jphotov.2019.2926860 Theoretical evaluation of contact stack for high efficiency IBC-SHJ solar cells Autorzy: Paul Procel, Guangtao Yang, Olindo Isabella, Miro Zeman Opublikowane w: Solar Energy Materials and Solar Cells, Issue 186, 2018, Page(s) 66-77, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2018.06.021 Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells Autorzy: Sihua Zhong, Monica Morales-Masis, Mathias Mews, Lars Korte, Quentin Jeangros, Weiliang Wu, Mathieu Boccard, Christophe Ballif Opublikowane w: Solar Energy Materials and Solar Cells, Issue 194, 2019, Page(s) 67-73, ISSN 0927-0248 Wydawca: Elsevier BV DOI: 10.1016/j.solmat.2019.02.005 Conference proceedings (5) Silicon oxide treatment to promote crystallinity of p-type microcrystalline layers for silicon heterojunction solar cells Autorzy: Mathieu Boccard, Raphaël Monnard, Luca Antognini, Christophe Ballif Opublikowane w: AIP Conference Proceedings volume 1999, 2018, Page(s) 040003 Wydawca: Author(s) DOI: 10.1063/1.5049266 Nitride layer screening as carrier-selective contacts for silicon heterojunction solar cells Autorzy: Angela N. Fioretti, Mathieu Boccard, Adele C. Tamboli, Andriy Zakutayev, Christophe Ballif Opublikowane w: AIP Conference Proceedings volume 1999, 2018, Page(s) 040007 Wydawca: Author(s) DOI: 10.1063/1.5049270 22% efficient dopant-free interdigitated back contact silicon solar cells Autorzy: Weiliang Wu, Wenjie Lin, Sihua Zhong, Bertrand Paviet-Salomon, Matthieu Despeisse, Zongcun Liang, Mathieu Boccard, Hui Shen, Christophe Ballif Opublikowane w: AIP Conference Proceedings volume 1999, 2018, Page(s) 040025 Wydawca: Author(s) DOI: 10.1063/1.5049288 From Wafers to Modules to Mass Production: Solving All Bottlenecks in Silicon Heterojunction Technology Autorzy: Ballif, Christofer; Bocard, Mathieu; Despeisse, Mathieu Opublikowane w: EUPVSEC, Issue 1, 2019, Page(s) 1 Wydawca: EUPVSEC Direct contact plating - Inline plating solution for ZEBRA IBC by local contacting Autorzy: Katharina Gensowski, Gisela Cimiotti, Jonas Eckert, Varun Arya, Juan Garcia la Roche, Julien Scheffelmeier, Bastien Decker, Giuseppe Galbiati, Dominik Rudolph, Sven Kluska Opublikowane w: INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019), 2019, Page(s) 020011 Wydawca: AIP Publishing DOI: 10.1063/1.5125876 Wyszukiwanie danych OpenAIRE... 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