Boosting the European Value Chain for Sustainable Power Electronics

Informazioni relative al progetto

FastLane

ID dell’accordo di sovvenzione: 101139788

DOI

10.3030/101139788

Data della firma CE 22 Maggio 2024

Data di avvio 1 Maggio 2024

Data di completamento 30 Aprile 2027

Finanziato da

• Digital, Industry and Space

Costo totale

€ 96 869 925,89

Contributo UE

€ 23 002 522,05

Coordinato da

VALEO ELECTRIFICATION SAS
France

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (1)

Data Management Plan

First version of the data management plan (DMP), with description of methods and processes to manage the relevant research data to make them findable, accessible, interoperable and reusable

Websites, patent fillings, videos etc. (1)

Project Website

Setup of the FASTLANE project website

Pubblicazioni

Conference proceedings (22)

Analýza výsledkov cyklického výkonového testu MOS tranzistora podporená 3D elektrotepelnými simuláciami

Autori: P. Suhaj, A. Chvala,
Pubblicato in: """Studentská vedecká a odborná činnost’ (ŠVOČ), 2025""", 2025
Editore: ŠVOČ
DOI: 10.5281/ZENODO.15774808

Implementácia meracieho systému pre testovanie spoľahlivosti výkonových prvkov

Autori: M. Hraňo, A. Chvála,
Pubblicato in: """Studentská vedecká a odborná činnost’ (ŠVOČ), 2026""", 2026
Editore: ŠVOČ

Design of Packaging of Power DMOS Transistor

Autori: P. Príbytný, A. Chvála, J. Marek
Pubblicato in: International Conference on Advances in Electronic and Photonic Technologies (ADEPT), 2024
Editore: Zenodo
DOI: 10.5281/ZENODO.14974727

Neural Network for Calibration of Electrical Models of Semiconductor Devices

Autori: M. Amira, A. Chvála
Pubblicato in: 2024 15th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2025
Editore: IEEE
DOI: 10.1109/ASDAM63148.2024.10844606

Design of Power SiC Transistor Embedded in PCB Supported by 3D Simulations

Autori: A. Chvála, J. Marek
Pubblicato in: International Conference on Advances in Electronic and Photonic Technologies (ADEPT), 2024
Editore: Zenodo
DOI: 10.5281/ZENODO.14974467

Semiconductor-Focused Simulation Environment for Emitted Noise Sensitivity of MOSFET Parameters

Autori: Robert Kragl, Steffen Beushausen, Karl Oberdieck, Konstantin Spanos, Ingmar Kallfass
Pubblicato in: 2025 International Symposium on Electromagnetic Compatibility – EMC Europe, 2025
Editore: IEEE
DOI: 10.1109/EMCEUROPE61644.2025.11176251

Optimization of Packaging for Power DMOS Transistor

Autori: P. Pribytný, M. Amira, J. Marek, A. Chvála
Pubblicato in: 13th International Conference on Advances in Electronic and Photonic Technologies, 2025, 2025
Editore: ADEPT
DOI: 10.5281/ZENODO.15774710

Neural Network-Based Calibration of Electrical Models for MOSFETs and Diode

Autori: M. Amira, A. Chvala
Pubblicato in: ELITECH`25 27th Conference of Doctoral Students Faculty of Electrical Engineering and Information Technology, 2025
Editore: ELITECH`26
DOI: 10.5281/ZENODO.15774850

TCAD Study on Parallel SiC Two-Pole SSCB Chips Integrated into a 900 V Power Module

Autori: M. Keck, N. Boettcher, R. Domes, J. Lindner, H. Rauh and J. Schulze
Pubblicato in: International Conference on Integrated Power Electronics (CIPS), Dresden, Germany, 2026
Editore: IEEE

Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery

Autori: Alaluss, Mohamed; Mysore, Madhu Lakshman; Herrmann, Clemens; Goel, Shubhanshu; Elsayed, Ahmed; Basler, Thomas
Pubblicato in: 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2025
Editore: IEEE
DOI: 10.23919/ISPSD62843.2025.11117512

FastLane: Life Cycle Analysis of SiC from Substrate to Converter

Autori: Elise Chaumat
Pubblicato in: Nanoelec Symposium on Sustainable Electronics and Digital Technologies, 2024
Editore: Zenodo
DOI: 10.5281/ZENODO.14988627

A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker

Autori: A. Hartmann, N. Boettcher
Pubblicato in: International Convention on Information and Communication Technology, Electronics and Microelectronics, 2025
Editore: IEEE
DOI: 10.5281/ZENODO.15681864

Design of Power SiC Transistor Embedded in PCB Supported by 3D Thermo-Mechanical Simulations

Autori: A. Chvála, P. Suhaj, M. Florovič, J. Marek
Pubblicato in: 2024 15th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2025
Editore: IEEE
DOI: 10.1109/ASDAM63148.2024.10844645

Active Voltage Probe for Direct Measurement of EMC-Relevant Noise of Power Semiconductors

Autori: Robert Kragl, Konstantin Spanos, Karl Oberdieck, Steffen Beushausen, Ingmar Kallfass
Pubblicato in: 2025 IEEE Energy Conversion Conference Congress and Exposition (ECCE), 2025
Editore: IEEE
DOI: 10.1109/ECCE58356.2025.11259863

Design of Packaging of Power DMOS Transistor

Autori: P. Príbytný, M. Amira, J. Marek, A. Chvála
Pubblicato in: 2024 15th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2025
Editore: IEEE
DOI: 10.1109/ASDAM63148.2024.10844597

Neural Network-Based Calibration of Electrical Models for Silicon Carbide Diodes

Autori: M. Amira, A. Chvála
Pubblicato in: WOCSDICE-EXMATEC, 2025, Cadiz, Spain 16-20 June 2025, 2025
Editore: WOCSDICE-EXMATEC
DOI: 10.5281/ZENODO.20024223

Thermal Simulation with Model Order Reduction for Improved Computational Speed

Autori: A. Chvala, M. Florovic, J. Marek
Pubblicato in: 13th International Conference on Advances in Electronic and Photonic Technologies, 2025, 2025
Editore: ADEPT
DOI: 10.5281/ZENODO.15774465

"Effiziente SiC-Leistungsmodule – Herausforderungen und Lösungsansätze zum großflächigen Silber-Sintern von ""Active Metal Brazed""- Substraten auf Aluminium-Bodenplatten"

Autori: Sebastian Fritzsche, Katja Stenger, Felix Koser, Noah Glaab, Benjamin Fabian, Florian Seifert
Pubblicato in: The 13th DVS/GMM Conference EBL 2026, 2026
Editore: EBL 2026
DOI: 10.5281/ZENODO.18983130

Analysis of Power Cyclic Test Results of Power MOS Transistor Supported by 3D Electro-Thermal Simulations

Autori: P. Suhaj, A. Chvala
Pubblicato in: 13th International Conference on Advances in Electronic and Photonic Technologies, 2025, 2025
Editore: ADEPT
DOI: 10.5281/ZENODO.15774774

Improving Device Behavior Prediction Using Neural Networks for MOSFET and Diode Modeling

Autori: M. Amira, A. Chvála
Pubblicato in: 7th International Conference on Microelectronic Devices and Technologies, (MicDAT 2025), 2025
Editore: IFSA Publishing
DOI: 10.13140/RG.2.2.25110.61767

Measurements at High Temperature for Thermal Resisstance of MOSFETs

Autori: C. R. Mitulescu (Sandulescu), N. Codreanu, C. Ionescu, P. Svasta, M. Branzei, B. Enache
Pubblicato in: 25th European Microelectronics and Packaging Conference&Exibition (EMPC), 2025, ISBN 9798331565756
Editore: IEEE

Impact of Switching Behavior on the Noise Emission of Power Semiconductors

Autori: Robert Kragl, Karl Oberdieck, Konstantin Spanos, Steffen Beushausen, Ingmar Kallfass
Pubblicato in: 2024 IEEE 9th Southern Power Electronics Conference (SPEC), 2025
Editore: IEEE
DOI: 10.1109/SPEC62217.2024.10893134

Peer reviewed articles (1)

Introducing a modified sample preparation and straightforward elemental ratio determination strategy with LA-ICP-MS to expand the nanoparticle probing toolkit

Autori: Olga Lanaridi, Yan Chen, Jakob Nils Blaschke, Pablo Ayala, Bernhard C. Bayer, Dominik Eder, Andreas Limbeck
Pubblicato in: Advances in Sample Preparation, Numero 16, 2025, ISSN 2772-5820
Editore: Elsevier BV
DOI: 10.1016/J.SAMPRE.2025.100223