Cel Atomically thin layers of transition metal dichalcogenides (TMD) are gaining increasing attention as new materials for futureBeyond-CMOS electronics. Recently, a great progress has been made in deposition of high quality layers of TMDs pavingthe way towards wafer scale device manufacturing. However, many fundamental and technological challenges still have tobe addressed. Precise tuning of the number of layers, doping, surface functionalization and selective low damage etching ofTMDs are among the most critical technological steps. Plasma processing is an enabling technology used for doping,etching and deposition of ultrathin layers in microelectronics industry. However, the application of plasmas for integration of2D materials remains marginal and poorly controlled. The major challenge for plasma treatment of atomically thin materialsis the need for unprecedented control of fluxes and energies of plasma species at the substrate. Pulsed plasma technologyholds promise of reaching conditions required for low damage processing of 2D materials with a single atomic layerprecision. The ambition of PULSE2D is to develop highly controlled pulsed-plasma technology for integration of TMDs innano-electronic devices on a wafer-scale. A fundamental study of the mechanisms of interaction between pulsed plasmasand atomically thin TMD materials will be performed. Defect production, adsorption and etching processes will be quantifiedas a function of plasma parameters. This information will be used to perform atomic layer etching, functionalization anddefect healing of TMDs using pulsed plasmas. The research and training activities will enhance technical skills of thecandidate in the emerging area of plasma processing of 2D materials, industry-relevant nano-fabrication and measurementof TMDs transport characteristics. High fundamental and technological interest and timeliness of this subject will provide apowerful thrust for the future research career of the candidate. Dziedzina nauki engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgraphenenatural sciencesphysical sciencesplasma physicsnatural scienceschemical sciencespolymer sciencesnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Słowa kluczowe Transition metal dichalcogenides 2D materials pulsed plasma treatment doping atomic layer etching defect healing ion energy control high-k dielectric gates atomic layer deposition Program(-y) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Temat(-y) MSCA-IF-2016 - Individual Fellowships Zaproszenie do składania wniosków H2020-MSCA-IF-2016 Zobacz inne projekty w ramach tego zaproszenia System finansowania MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF) Koordynator INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM Wkład UE netto € 160 800,00 Adres KAPELDREEF 75 3001 Leuven Belgia Zobacz na mapie Region Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven Rodzaj działalności Research Organisations Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Uczestnictwo w unijnych programach w zakresie badań i innowacji Opens in new window sieć współpracy HORIZON Opens in new window Koszt całkowity € 160 800,00