GaN for Advanced Power Applications

Informacje na temat projektu

GaN4AP

Identyfikator umowy o grant: 101007310

DOI

10.3030/101007310

Projekt został zamknięty

Data podpisania przez KE 12 Maja 2021

Data rozpoczęcia 1 Czerwca 2021

Data zakończenia 31 Sierpnia 2025

Finansowanie w ramach

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Koszt całkowity

€ 62 247 641,37

Wkład UE

€ 15 030 619,61

Koordynowany przez

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Italy

CORDIS oferuje możliwość skorzystania z odnośników do publicznie dostępnych publikacji i rezultatów projektów realizowanych w ramach programów ramowych HORYZONT.

Odnośniki do rezultatów i publikacji związanych z poszczególnymi projektami 7PR, a także odnośniki do niektórych konkretnych kategorii wyników, takich jak zbiory danych i oprogramowanie, są dynamicznie pobierane z systemu OpenAIRE .

Rezultaty

Websites, patent fillings, videos etc. (2)

D8.1.1 - Website

Project website including objectives WPs description participants

D1.1.2 - Project website

This is the realization of the Project website for the presentation of the project with the private area to work as a tool for sharing info and documents among the partners

Publikacje

Peer reviewed articles (24)

Using Triangular Gate Voltage Pulses to Evaluate Hysteresis and Charge Trapping Effects in GaN on Si HEMTs

Autorzy: Pasquale Cusumano, Flavio Vella, Alessandro Sirchia
Opublikowane w: Electronics, Numer 14, 2025, Strona(/y) 1991, ISSN 2079-9292
Wydawca: MDPI AG
DOI: 10.3390/electronics14101991

CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields

Autorzy: Marek Zak, Pawel Kempisty, Boleslaw Lucznik, Robert Kucharski, Michal Bockowski
Opublikowane w: Crystals, Numer 15, 2025, Strona(/y) 754, ISSN 2073-4352
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst15090754

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

Autorzy: Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frédéric Georgi, Maxime Hugues, Yvon Cordier, François Vurpillot, Lorenzo Rigutti
Opublikowane w: Applied Physics Letters, Numer 123, 2023, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/5.0167855

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Autorzy: Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte
Opublikowane w: AIP Advances, Numer 14, 2025, ISSN 2158-3226
Wydawca: American Institute of Physics Inc.
DOI: 10.1063/5.0228323

Europium diffusion in ammonothermal gallium nitride

Autorzy: A. Jaroszynska, E. Grzanka, M. Grabowski, G. Staszczak, I. Prozheev, R. Jakiela, F. Tuomisto, M. Bockowski
Opublikowane w: Applied Surface Science, Numer 625, 2024, Strona(/y) 157188, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2023.157188

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Autorzy: Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas De France, Jean-Claude De Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq
Opublikowane w: Applied Physics Express, Numer 18, 2025, Strona(/y) 046501, ISSN 1882-0778
Wydawca: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/adc5db

Evaluation of GaN Transistors for Grid-Connected 3-Level T-Type Inverters

Autorzy: Julian Endres, Tobias Haas, Alexander Pawellek, Vinicius Kremer, Roger Franchino
Opublikowane w: Electronics, Numer 14, 2025, Strona(/y) 2935, ISSN 2079-9292
Wydawca: MDPI AG
DOI: 10.3390/electronics14152935

A GaN-Integrated Galvanically Isolated Data Link Based on RF Planar Coupling With Voltage Combining for Gate-Driver Applications

Autorzy: Simone Spataro, Egidio Ragonese, Nunzio Spina, Giuseppe Palmisano
Opublikowane w: IEEE Access, Numer 12, 2024, Strona(/y) 48530-48539, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2024.3383535

Electron effective masses of Sc<i>x</i>Al1−<i>x</i>N and Al<i>x</i>Ga1−<i>x</i>N from first-principles calculations of unfolded band structure

Autorzy: Luigi Balestra, Elena Gnani, Susanna Reggiani
Opublikowane w: Journal of Applied Physics, Numer 132, 2025, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/5.0115512

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

Autorzy: G. Greco, P. Fiorenza, F. Giannazzo, M. Vivona, C. Venuto, F. Iucolano, F. Roccaforte
Opublikowane w: IEEE Electron Device Letters, Numer 45, 2024, Strona(/y) 1724-1727, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3438807

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

Autorzy: Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Malgorzata Iwinska, Michal Bockowski, Lutz Kirste
Opublikowane w: Materials, Numer 15, 2025, Strona(/y) 4621, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma15134621

Evaluation of Dynamic On-Resistance and Trapping Effects in GaN on Si HEMTs Using Rectangular Gate Voltage Pulses

Autorzy: Pasquale Cusumano, Alessandro Sirchia, Flavio Vella
Opublikowane w: Electronics, Numer 14, 2025, Strona(/y) 2791, ISSN 2079-9292
Wydawca: MDPI AG
DOI: 10.3390/electronics14142791

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Autorzy: R. Lo Nigro, P. Fiorenza, G. Greco, E. Schilirò, F. Roccaforte
Opublikowane w: Materials, Numer 15, 2022, Strona(/y) 830, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma15030830

Atomic Resolution Interface Structure and Vertical Current Injection in Highly Uniform Mos2 Heterojunctions with Bulk Gan

Autorzy: Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte, Gianfranco Sfuncia, Giuseppe Nicotra, Marco Cannas, Simonpietro Agnello, Eric Frayssinet, Yvon Cordier, Adrien Michon, Antal Koos, Bela Pecz
Opublikowane w: Applied Surface Science, 2023, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.2139/ssrn.4359307

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Autorzy: Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Opublikowane w: Journal of Physics D: Applied Physics, Numer 57, 2025, Strona(/y) 433002, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Autorzy: Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Opublikowane w: Materials Science in Semiconductor Processing, Numer 171, 2024, Strona(/y) 107977, ISSN 1369-8001
Wydawca: Pergamon Press
DOI: 10.1016/j.mssp.2023.107977

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Autorzy: M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 71, 2024, Strona(/y) 1344-1355, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Autorzy: F. Roccaforte, F. Giannazzo, F. Greco
Opublikowane w: Micro, Numer 2, 2022, Strona(/y) 23-53, ISSN 2673-8023
Wydawca: MDPI
DOI: 10.3390/micro2010002

ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate

Autorzy: Caroline Elias, Sébastien Chenot, Florian Bartoli, Maxime Hugues, Yvon Cordier
Opublikowane w: physica status solidi (a), Numer 222, 2025, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400963

On Stress-Induced Polarization Effect in Ammonothermally Grown GaN

Autorzy: K. Grabianska, R. Kucharski, T. Sochacki, J.L. Weyher, M. Iwinska, I. Grzegory, M. Bockowski
Opublikowane w: Crystals, Numer 12, 2022, Strona(/y) 554, ISSN 2073-4352
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst12040554

Methodology for Designing Broadband DC Link Filters for Voltage Source Converters

Autorzy: Sebastian Raab, Sebastian Weickert, Henning Kasten
Opublikowane w: Electronics, Numer 14, 2025, Strona(/y) 2743, ISSN 2079-9292
Wydawca: MDPI AG
DOI: 10.3390/electronics14142743

TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE

Autorzy: Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani
Opublikowane w: IEEE Access, Numer 11, 2024, Strona(/y) 6293-6298, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2023.3237026

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Autorzy: Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Opublikowane w: Microelectronic Engineering, Numer 276, 2025, Strona(/y) 112009, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2023.112009

Recent progress in crystal growth of bulk GaN

Autorzy: M. Bockowski, I. Grzegory
Opublikowane w: Acta Physica Polonica A, Numer 141 (3), 2022, Strona(/y) 167-174, ISSN 0587-4246
Wydawca: Polska Akademia Nauk
DOI: 10.12693/aphyspola.141.167

Conference proceedings (7)

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

Autorzy: Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani
Opublikowane w: Power Electronic Devices and Components, Numer 10, 2025, Strona(/y) 100080, ISSN 2772-3704
Wydawca: Elsevier BV
DOI: 10.1016/j.pedc.2025.100080

1-mS constant-Gm GaN transconductor with embedded process compensation

Autorzy: Katia Samperi, Salvatore Pennisi, Francesco Pulvirenti, Giuseppe Palmisano
Opublikowane w: 2025
Wydawca: Center for Open Science
DOI: 10.31219/osf.io/qyxpg

Efficiency Assessment of an Open-End Winding Inverter Exploiting a Mixed Si/GaN Technology

Autorzy: G. Baia, S. De Caro, S. Foti, H. H. Khan, A. Testa
Opublikowane w: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), 2024, Strona(/y) 1-9
Wydawca: IEEE
DOI: 10.23919/epe23ecceeurope58414.2023.10264533

Micro Power Supply Based on Piezoelectric Effect

Autorzy: M. Husak, A. Budkova, T. Pycha, A. Laposa, V. Povolny, V. Janicek, J. Novak, A. Boura, J. Foit
Opublikowane w: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2022, Strona(/y) 1-4, ISBN 978-80-88365-20-4
Wydawca: IEEE
DOI: 10.1109/asdam55965.2022.9966775

Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter

Autorzy: ANGELO DI CATALDO, Giuseppe Aiello, Dario Patti, giacomo scelba, Mario Cacciato, Francesco Gennaro
Opublikowane w: 2024
Wydawca: Center for Open Science
DOI: 10.31219/osf.io/mvkus

Design and Experimental Characterization of a Modular GaN-based Three-Phase and Three-Level ANPC Inverter for Electric Traction

Autorzy: Angelo Di Cataldo, Giuseppe Aiello, Dario Patti, giacomo scelba, Mario Cacciato, Francesco Gennaro
Opublikowane w: Proc. 15th International Conference ELEKTRO 2024, Zakopane (Poland), 2026
Wydawca: Center for Open Science
DOI: 10.31219/osf.io/wmb9f

Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations

Autorzy: F. Ercolano, L. Balestra, S. Krause, S. Leone, I. Streicher, P. Waltereit, M. Dammann, S. Reggiani
Opublikowane w: 2023 IEEE International Integrated Reliability Workshop (IIRW), 2024, Strona(/y) 1-7
Wydawca: IEEE
DOI: 10.1109/iirw59383.2023.10477691

Non-peer reviewed articles (10)

Fully Integrated Galvanic Isolation Interface in GaN Technology

Autorzy: Nunzio Spina, Katia Samperi, Antoine Pavlin, Salvatore Pennisi, Giuseppe Palmisano
Opublikowane w: IEEE Transactions on Circuits and Systems I: Regular Papers, Numer 70, 2023, Strona(/y) 4605-4614, ISSN 1549-8328
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tcsi.2023.3296200

Micro-Raman and SEM analyses of failed GaN HEMT multilayer architecture

Autorzy: Enza Fazio, Cettina Bottari, Santi Alessandrino, Beatrice Carbone, Salvatore Adamo, Alfio Russo, Mariangela Latino, Sabrina Conoci, Fortunato Neri, Ammar Tariq, Carmelo Corsaro
Opublikowane w: Microelectronics Reliability, Numer 169, 2025, Strona(/y) 115754, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2025.115754

Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference

Autorzy: Cesare Bimbi, Salvatore Pennisi, Salvatore Privitera, Francesco Pulvirenti
Opublikowane w: Electronics, Numer 11, 2025, Strona(/y) 1840, ISSN 2079-9292
Wydawca: MDPI AG
DOI: 10.3390/electronics11121840

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

Autorzy: Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Magdalena A. Zajac, Malgorzata Iwinska, Lutz Kirste, Michal Bockowski
Opublikowane w: Materials, Numer 16, 2025, Strona(/y) 3360, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma16093360

On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

Autorzy: Marcello Cioni, Alessandro Chini, Nicolò Zagni, Giovanni Verzellesi, Giovanni Giorgino, Giacomo Cappellini, Cristina Miccoli, Gaetan Toulon, Tariq Wakrim, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano
Opublikowane w: IEEE Electron Device Letters, Numer 45, 2024, Strona(/y) 1437-1440, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3417313

Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy

Autorzy: Zainab Dahrouch, Giuliana Malta, Moreno d’Ambrosio, Angelo Alberto Messina, Mattia Musolino, Alessandro Sitta, Michele Calabretta, Salvatore Patanè
Opublikowane w: Applied Sciences, Numer 14, 2025, Strona(/y) 4230, ISSN 2076-3417
Wydawca: MDPI AG
DOI: 10.3390/app14104230

Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

Autorzy: Alessandro Chini, Nicolò Zagni, Giovanni Verzellesi, Marcello Cioni, Giovanni Giorgino, Maria Concetta Nicotra, Maria Eloisa Castagna, Ferdinando Iucolano
Opublikowane w: IEEE Electron Device Letters, Numer 44, 2023, Strona(/y) 915-918, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3265503

Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach

Autorzy: Lutz Kirste, Thu Nhi Tran-Caliste, Tomasz Sochacki, Jan L. Weyher, Patrik Straňák, Robert Kucharski, Karolina Grabianska, José Baruchel, Michal Bockowski
Opublikowane w: Progress in Crystal Growth and Characterization of Materials, Numer 71, 2025, Strona(/y) 100668, ISSN 0960-8974
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.pcrysgrow.2025.100668

Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs

Autorzy: Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Ferdinando Iucolano
Opublikowane w: Electronic Materials, Numer 5, 2025, Strona(/y) 132-144, ISSN 2673-3978
Wydawca: MDPI AG
DOI: 10.3390/electronicmat5030009

Modeling and Extraction of the Specific Contact Resistance of GaN p-i-n Diodes up to 40 GHz

Autorzy: Kevin Nadaud, Zihao Lyu, Daniel Alquier, Quentin Paoli, Julien Ladroue, Arnaud Yvon, Eric Frayssinet, Yvon Cordier, Jérôme Billoué
Opublikowane w: IEEE Transactions on Electron Devices, Numer 72, 2025, Strona(/y) 1657-1662, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2025.3539644

Other (1)

The material of the future

Autorzy: L. Liggio
Opublikowane w: Platinum, Numer March 2022, 2022, Strona(/y) 107
Wydawca: PUBLISCOOP Editore

Book chapters (1)

Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization

Autorzy: Alberto Vella, Giuseppe Galioto, Giuseppe Costantino Giaconia
Opublikowane w: Lecture Notes in Electrical Engineering, Applications in Electronics Pervading Industry, Environment and Society, 2023, Strona(/y) 30-38
Wydawca: Springer Nature Switzerland
DOI: 10.1007/978-3-031-30333-3_5