Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies

Rezultaty

Improved noise measurements and RF noise model. p-type noise
PA and LNA data sheet
Web site launch and Press Release for the INSIGHT project

Web site launch and Press Release for the INSIGHT project

Correlation between CV, 1/f, Hysteresis gm(w) on the border trap density

Correlation between CV, 1/f, Hysteresis gm(w) on the border trap density.

Final report on RF-transistors
Data from first small signal model obtained from existing nanowire technology
First noise measurements and RF noise model
Second update on Dissemination Plan

Second update on dissemination plan. It will be included in the “plan for Dissemination and Exploitation”.

Circuit-level Benchmarking Report
Final Dissemination Plan

Final Dissemination Plan. It will be included in “Plan for Dissemination and Exploitation”.

External Communication Plan
Report on high voltage (3-6V) gate stack development

Publikacje

First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

Autorzy: V. Deshpande, V. Djara, E. O'Connor, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine, P. Hashemi, K. Balakrishnan
Opublikowane w: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Numer Yearly, 2016, Strona(/y) 127-130, ISBN 978-1-4673-8609-8
Wydawca: IEEE
DOI: 10.1109/ULIS.2016.7440069

Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si

Autorzy: Martin Berg, Karl-Magnus Persson, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Opublikowane w: 2015 IEEE International Electron Devices Meeting (IEDM), 2015, Strona(/y) 31.2.1-31.2.4, ISBN 978-1-4673-9894-7
Wydawca: IEEE
DOI: 10.1109/IEDM.2015.7409806

Single suspended InGaAs nanowire MOSFETs

Autorzy: Cezar B. Zota, Lars-Erik Wernersson, Erik Lind
Opublikowane w: 2015 IEEE International Electron Devices Meeting (IEDM), 2015, Strona(/y) 31.4.1-31.4.4, ISBN 978-1-4673-9894-7
Wydawca: IEEE
DOI: 10.1109/IEDM.2015.7409808

Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grown p-Ga0.7In0.3Sb (100) and thermal atomic layer deposited (ALD) Al2O3

Autorzy: Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I.
Opublikowane w: WoDIM, Numer Yearly; Session 4: III-V FETs, 2016, Strona(/y) N/A
Wydawca: http://wodim2016.imm.cnr.it/index.asp?cont=program

Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si

Autorzy: Adam Jonsson, Johannes Svensson, Lars-Erik Wemersson
Opublikowane w: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Strona(/y) 39.3.1-39.3.4, ISBN 978-1-7281-1987-8
Wydawca: IEEE
DOI: 10.1109/iedm.2018.8614685

Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si

Autorzy: Olli-Pekka Kilpi, Johannes Svensson, Lars-Erik Wernersson
Opublikowane w: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Strona(/y) 17.3.1-17.3.4, ISBN 978-1-5386-3559-9
Wydawca: IEEE
DOI: 10.1109/iedm.2017.8268408

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al<inf>2</inf>O<inf>3</inf>/InGaAs stacks

Autorzy: E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestri, P. Hurley, L. Selmi
Opublikowane w: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Strona(/y) 1-4, ISBN 978-1-5386-4811-7
Wydawca: IEEE
DOI: 10.1109/ulis.2018.8354757

Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Autorzy: Stefan Andric, Lars Ohlsson, Lars-Erik Wenrersson
Opublikowane w: 2019 92nd ARFTG Microwave Measurement Conference (ARFTG), 2019, Strona(/y) 1-4, ISBN 978-1-5386-6599-2
Wydawca: IEEE
DOI: 10.1109/arftg.2019.8637222

First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts

Autorzy: V. Deshpande, H. Hahn, E. O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, H. Boutry, J. Widiez, L. Brevard, C. Le Royer, M. Vinet, J. Fompeyrine, L. Czornomaz
Opublikowane w: 2017 Symposium on VLSI Technology, 2017, Strona(/y) T74-T75, ISBN 978-4-86348-605-8
Wydawca: IEEE
DOI: 10.23919/vlsit.2017.7998205

Integration of III–V nanowires for the next RF- and logic technology generation

Autorzy: Lars-Erik Wernersson
Opublikowane w: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017, Strona(/y) 1-2, ISBN 978-1-5090-5805-1
Wydawca: IEEE
DOI: 10.1109/vlsi-tsa.2017.7942489

A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

Autorzy: H. Hahn, V. Deshpande, E. Caruso, S. Sant, E. O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, A. Olziersky, P. Palestri, L. Selmi, A. Schenk, L. Czornomaz
Opublikowane w: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Strona(/y) 17.5.1-17.5.4, ISBN 978-1-5386-3559-9
Wydawca: IEEE
DOI: 10.1109/iedm.2017.8268410

Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration

Autorzy: V. Deshpande, H. Hahn, V. Djara, E. O'Connor, D. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz
Opublikowane w: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Strona(/y) 244-247, ISBN 978-1-5090-5978-2
Wydawca: IEEE
DOI: 10.1109/essderc.2017.8066637

InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance

Autorzy: C. Convertino, C. B. Zota, D. Caimi, M. Sousa, L. Czornomaz
Opublikowane w: 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, Strona(/y) 162-165, ISBN 978-1-5386-5401-9
Wydawca: IEEE
DOI: 10.1109/essderc.2018.8486862

First InGaAs lateral nanowire MOSFET RF noise measurements and model

Autorzy: Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, Lars-Erik Wernersson, Erik Lind
Opublikowane w: 2017 75th Annual Device Research Conference (DRC), 2017, Strona(/y) 1-2, ISBN 978-1-5090-6328-4
Wydawca: IEEE
DOI: 10.1109/drc.2017.7999451

High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications

Autorzy: C. B. Zota, C. Convertino, Y. Baumgartner, M. Sousa, D. Caimi, L. Czornomaz
Opublikowane w: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Strona(/y) 39.4.1-39.4.4, ISBN 978-1-7281-1987-8
Wydawca: IEEE
DOI: 10.1109/iedm.2018.8614530

InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance

Autorzy: C. Convertino, C. Zota, S. Sant, F. Eltes, M. Sousa, D. Caimi, A. Schenk, L. Czornomaz
Opublikowane w: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Strona(/y) 39.2.1-39.2.4, ISBN 978-1-7281-1987-8
Wydawca: IEEE
DOI: 10.1109/iedm.2018.8614640

Investigation of InAs/GaSb tunnel diodes on SOI

Autorzy: C. Convertino, D. Cutaia, H. Schmid, N. Bologna, P. Paletti, A.M. Ionescu, H. Riel, K. E. Moselund
Opublikowane w: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Strona(/y) 148-151, ISBN 978-1-5090-5313-1
Wydawca: IEEE
DOI: 10.1109/ulis.2017.7962586

Properties of III–V nanowires: MOSFETs and TunnelFETs

Autorzy: Lars-Erik Wernersson
Opublikowane w: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Strona(/y) 99-100, ISBN 978-1-5090-5313-1
Wydawca: IEEE
DOI: 10.1109/ulis.2017.7962611

A 250 GHz millimeter wave amplifier MMIC based on 30 nm metamorphic InGaAs MOSFET technology

Autorzy: Arnulf Leuther, Matthias Ohlrogge, Lukas Czornomaz, Thomas Merkle, Frank Bernhardt, Axel Tessmann
Opublikowane w: 2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017, Strona(/y) 130-133, ISBN 978-2-87487-048-4
Wydawca: IEEE
DOI: 10.23919/eumic.2017.8230677

Monolithic integration of multiple III-V semiconductors on Si

Autorzy: H. Schmid, B. Mayer, J. Gooth, S. Wirths, L. Czornomaz, H. Riel, S. Mauthe, C. Convertino, K. E. Moselund
Opublikowane w: 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017, Strona(/y) 1-3, ISBN 978-1-5386-3766-1
Wydawca: IEEE
DOI: 10.1109/s3s.2017.8309200

InGaAs-on-Si (Ge) 3D Monolithic Technology for CMOS and More-than-Moore

Autorzy: V. Deshpande, V. Djara, T. Morf, P. Hashemi, E. O’Connor, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz and J. Fompeyrine
Opublikowane w: Int'l Conf. on Solid State Devices and Materials (SSDM),, Numer Book of Extended Abstracts in 2016, 2016
Wydawca: SSDM

80 nm InGaAs MOSFET W-band low noise amplifier

Autorzy: Amulf Leuther, Matthias Ohlrogge, Lukas Czornomaz, Thomas Merkle, Frank Bernhardt, Axel Tessmann
Opublikowane w: 2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, Strona(/y) 1133-1136, ISBN 978-1-5090-6360-4
Wydawca: IEEE
DOI: 10.1109/mwsym.2017.8058798

Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I<inf>on</inf> = 330 μA/μm at I<inf>off</inf> = 100 nA/μm and V<inf>D</inf> = 0.5 V

Autorzy: Olli-Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Opublikowane w: 2017 Symposium on VLSI Technology, 2017, Strona(/y) T36-T37, ISBN 978-4-86348-605-8
Wydawca: IEEE
DOI: 10.23919/vlsit.2017.7998191

High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology

Autorzy: A. Tessmann, A. Leuther, F. Heinz, F. Bernhardt, H. Massler
Opublikowane w: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018, Strona(/y) 156-159, ISBN 978-1-5386-6502-2
Wydawca: IEEE
DOI: 10.1109/bcicts.2018.8550836

InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance

Autorzy: C. B. Zota, C. Convertino, V. Deshpande, T. Merkle, M. Sousa, D. Caimi, L. Czomomaz
Opublikowane w: 2018 IEEE Symposium on VLSI Technology, 2018, Strona(/y) 165-166, ISBN 978-1-5386-4218-4
Wydawca: IEEE
DOI: 10.1109/vlsit.2018.8510631

Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs

Autorzy: H. Schmid, D. Cutaia, J. Gooth, S. Wirths, N. Bologna, K. E. Moselund, H. Riel
Opublikowane w: 2016 IEEE International Electron Devices Meeting (IEDM), Numer Yearly, 2016, Strona(/y) 3.6.1-3.6.4, ISBN 978-1-5090-3902-9
Wydawca: IEEE
DOI: 10.1109/IEDM.2016.7838340

InGaAs tri-gate MOSFETs with record on-current

Autorzy: Cezar B. Zota, Fredrik Lindelow, Lars-Erik Wernersson, Erik Lind
Opublikowane w: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Strona(/y) 3.2.1-3.2.4, ISBN 978-1-5090-3902-9
Wydawca: IEEE
DOI: 10.1109/IEDM.2016.7838336

InGaAs nanowire MOSFETs with I<inf>ON</inf> = 555 µA/µm at I<inf>OFF</inf> = 100 nA/µm and V<inf>DD</inf> = 0.5 V

Autorzy: Cezar B. Zota, Fredrik Lindelow, Lars-Erik Wernersson, Erik Lind
Opublikowane w: 2016 IEEE Symposium on VLSI Technology, Numer Yearly, 2016, Strona(/y) 1-2, ISBN 978-1-5090-0638-0
Wydawca: IEEE
DOI: 10.1109/VLSIT.2016.7573418

Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

Autorzy: Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson
Opublikowane w: IEEE Electron Device Letters, Numer Volume:PP Numer: 99 , 2016, Strona(/y) 1-1, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2581918

High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Autorzy: Cezar Zota, Lars-Erik Wernersson, Erik Lind
Opublikowane w: IEEE Electron Device Letters, 2016, Strona(/y) 1-1, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2602841

High-Frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz

Autorzy: Cezar Zota, Fredrik Lindelöw, Lars-Erik Wernersson, Erik Lind
Opublikowane w: Electronics Letters, 2016, ISSN 0013-5194
Wydawca: Institute of Electrical Engineers
DOI: 10.1049/el.2016.3108

Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP

Autorzy: Philippe Ferrandis, Mathilde Billaud, Julien Duvernay, Mickael Martin, Alexandre Arnoult, Helen Grampeix, Mikael Cassé, Hervé Boutry, Thierry Baron, Maud Vinet, Gilles Reimbold
Opublikowane w: Journal of Applied Physics, Numer 123/16, 2018, Strona(/y) 161534, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.5007920

Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs

Autorzy: Markus Hellenbrand, Elvedin Memisevic, Martin Berg, Olli-Pekka Kilpi, Johannes Svensson, Lars-Erik Wernersson
Opublikowane w: IEEE Electron Device Letters, Numer 38/11, 2017, Strona(/y) 1520-1523, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2017.2757538

A Self-Aligned Gate-Last Process Applied to All-III–V CMOS on Si

Autorzy: Adam Jonsson, Johannes Svensson, Lars-Erik Wernersson
Opublikowane w: IEEE Electron Device Letters, Numer 39/7, 2018, Strona(/y) 935-938, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2837676

Low-frequency noise in nanowire and planar III-V MOSFETs

Autorzy: Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Opublikowane w: Microelectronic Engineering, 2019, Strona(/y) 110986, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2019.110986

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Autorzy: Jun Lin, Scott Monaghan, Karim Cherkaoui, Ian M. Povey, Brendan Sheehan, Paul K. Hurley
Opublikowane w: Microelectronic Engineering, Numer 178, 2017, Strona(/y) 204-208, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2017.05.020

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

Autorzy: Clarissa Convertino, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, Lukas Czornomaz
Opublikowane w: Materials, Numer 12/1, 2019, Strona(/y) 87, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma12010087

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Autorzy: Mattias Borg, Lynne Gignac, John Bruley, Andreas Malmgren, Saurabh Sant, Clarissa Convertino, Marta D Rossell, Marilyne Sousa, Chris Breslin, Heike Riel, Kirsten E Moselund, Heinz Schmid
Opublikowane w: Nanotechnology, Numer 30/8, 2019, Strona(/y) 084004, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aaf547

High frequency III–V nanowire MOSFETs

Autorzy: Erik Lind
Opublikowane w: Semiconductor Science and Technology, Numer 31/9, 2016, Strona(/y) 093005, ISSN 0268-1242
Wydawca: Institute of Physics Publishing
DOI: 10.1088/0268-1242/31/9/093005

Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

Autorzy: Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Opublikowane w: IEEE Journal of the Electron Devices Society, Numer 7, 2019, Strona(/y) 70-75, ISSN 2168-6734
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2878659

20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

Autorzy: Axel Tessmann, Arnulf Leuther, Felix Heinz, Frank Bernhardt, Laurenz John, Hermann Massler, Lukas Czornomaz, Thomas Merkle
Opublikowane w: IEEE Journal of Solid-State Circuits, 2019, Strona(/y) 1-8, ISSN 0018-9200
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2019.2915161

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Autorzy: Olli-Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind, Lars-Erik Wernersson
Opublikowane w: Nano Letters, Numer 17/10, 2017, Strona(/y) 6006-6010, ISSN 1530-6984
Wydawca: American Chemical Society
DOI: 10.1021/acs.nanolett.7b02251

High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths

Autorzy: Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten Moselund, Lukas Czornomaz
Opublikowane w: IEEE Electron Device Letters, Numer 40/4, 2019, Strona(/y) 538-541, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2902519

Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS With Interlayer Contacts

Autorzy: Veeresh Deshpande, H. Hahn, E. O'Connor, Y. Baumgartner, D. Caimi, M. Sousa, H. Boutry, J. Widiez, L. Brevard, C. Le Royer, M. Vinet, J. Fompeyrine, L. Czornomaz
Opublikowane w: IEEE Transactions on Electron Devices, Numer 64/11, 2017, Strona(/y) 4503-4509, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2017.2755662

DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

Autorzy: V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine
Opublikowane w: Solid-State Electronics, Numer 128, 2017, Strona(/y) 87-91, ISSN 0038-1101
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2016.10.034

High-performance InGaAs FinFETs with raised source/drain extensions

Autorzy: Clarissa Convertino, Cezar B. Zota, Daniele Caimi, Marilyne Sousa, Kirsten E. Moselund, Lukas Czornomaz
Opublikowane w: Japanese Journal of Applied Physics, Numer 58/8, 2019, Strona(/y) 080901, ISSN 0021-4922
Wydawca: IOP Publishing

High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

Autorzy: Mattias Borg, Heinz Schmid, Johannes Gooth, Marta D. Rossell, Davide Cutaia, Moritz Knoedler, Nicolas Bologna, Stephan Wirths, Kirsten E. Moselund, Heike Riel
Opublikowane w: ACS Nano, Numer 11/3, 2017, Strona(/y) 2554-2560, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.6b04541

Inversion in the In 0.53 Ga 0.47 As metal-oxide-semiconductor system: Impact of the In 0.53 Ga 0.47 As doping concentration

Autorzy: É. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I. M. Povey, P. K. Hurley
Opublikowane w: Applied Physics Letters, Numer 110/3, 2017, Strona(/y) 032902, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4973971

Impact of doping and diameter on the electrical properties of GaSb nanowires

Autorzy: Aein S. Babadi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Opublikowane w: Applied Physics Letters, Numer 110/5, 2017, Strona(/y) 053502, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4975374

Uniting III-V Tunnel FETs with Silicon

Autorzy: Davide Cutaia, K. Moselund, H. Schmid, M. Borg, H. Riel
Opublikowane w: Compound Semiconductor, Numer 23 (1), 2017, Strona(/y) 38-42, ISSN 2042-7328
Wydawca: Angel Business Communications

Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond

Autorzy: V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, T. Morf, K. Balakrishnan, D. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz
Opublikowane w: Japanese Journal of Applied Physics, Numer vol 56, 2017, Strona(/y) 04CA05, ISSN 1347-4065
Wydawca: Institute of Physics
DOI: 10.7567/JJAP.56.04CA05

Rezultaty

Publikacje

Udostępnij tę stronę Udostępnij tę stronę w mediach społecznościowych

Pobierz Pobierz zawartość strony